ZXGD3104N8
SYNCHRONOUS MOSFET CONTROLLER IN SO8
Description
The ZXGD3104 is intended to drive MOSFETs configured as ideal
diode replacements. The device is comprised of a differential amplifier
detector stage and high current driver. The detector monitors the
reverse voltage of the MOSFET, such that if the body diode
conduction occurs, a positive voltage is applied to the MOSFET’s Gate
Pin.
Once the positive voltage is applied to the Gate, the MOSFET
switches on. The detector’s output voltage is then proportional to the
MOSFET Drain-Source voltage, and this is applied to the Gate via the
driver. This action provides a rapid MOSFET turn-off at zero Drain
current.
Features
5-25V V
CC
Range
Operating up to 250kHz
Suitable for Discontinuous Conduction Mode (DCM), Critical
Conduction Mode (CrCM), and Continuous Conduction Mode
(CCM) Operation
Turn-Off Propagation Delay 15ns and Turn-Off Time 20ns
Proportional Gate Drive Control
Detector Threshold Voltage -10mV
Standby Current 5mA
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Flyback Converters in:
≥90W Laptop Adaptors
Mechanical Data
Typical Configuration
Case: SO-8
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish – Solderable per MIL-STD-202,
Method 208
Weight: 0.074 grams (Approximate)
SO-8
DNC
REF
GATEL
GATEH
Top View
Pin-Out
DRAIN
BIAS
GND
V
CC
Ordering Information
(Note 4)
Product
ZXGD3104N8TC
Notes:
Marking
ZXGD3104
Reel Size (inches)
13
Tape Width (mm)
12
Quantity per Reel
2,500
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXGD
3104
YY WW
ZXGD
3104
YY
WW
= Product Type Marking Code, Line 1
= Product Type Marking Code, Line 2
= Year (ex: 11 = 2011)
= Week (01 - 53)
November 2015
© Diodes Incorporated
ZXGD3104N8
Document Number DS35546
Rev. 2 - 2
1 of 13
www.diodes.com
ZXGD3104N8
Functional Block Diagram
Pin Number
1
Name
DNC
Do Not Connect
Leave pin floating.
Description and Function
2
REF
Reference
This pin is connected to V
CC
via resistor, R
REF.
Select R
REF
to source 2.16mA into this pin. Refer to Table 1
in Application Information section.
Gate Turn-Off
This pin sinks current, I
SINK
, from the synchronous MOSFET Gate.
Gate Turn-On
This pin sources current, I
SOURCE
, to the synchronous MOSFET Gate.
Power Supply
This is the supply pin. It is recommended to decouple this point to Ground closely with a ceramic capacitor.
Ground
This is the ground reference point. Connect to the synchronous MOSFET Source terminal.
Bias
This pin is connected to V
CC
via resistor, R
BIAS
. Select R
BIAS
to Source 3mA into this pin. Refer to Table 1 in
Application Information section.
Drain Connection
This pin connects directly to the synchronous MOSFET Drain terminal.
3
4
5
6
7
GATEL
GATEH
V
CC
GND
BIAS
8
DRAIN
ZXGD3104N8
Document Number DS35546
Rev. 2 - 2
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November 2015
© Diodes Incorporated
ZXGD3104N8
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Supply Voltage, Relative to GND
Drain Pin Voltage
Gate Output Voltage
Gate Driver Peak Source Current
Gate Driver Peak Sink Current
Reference Voltage
Reference Current
Bias Voltage
Bias Current
Symbol
V
CC
V
D
V
G
I
SOURCE
I
SINK
V
REF
I
REF
V
BIAS
I
BIAS
Value
25
-3 to 180
-3 to V
CC
+3
2.5
7
V
CC
25
V
CC
100
Unit
V
V
V
A
A
V
mA
V
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
(Note 5)
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
Value
490
3.92
Unit
655
5.24
720
5.76
mW
mW/°C
785
6.28
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating Temperature Range
Storage Temperature Range
Notes:
R
θJA
R
θJL
T
J
T
STG
255
191
173
159
135
-40 to +150
-55 to +150
°C/W
°C/W
°C
5. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
6. Same as Note (5), except Pin 5 (V
CC
) and Pin 6 (GND) are both connected to separate 5mm x 5mm 1oz copper heatsinks.
7. Same as Note (6), except both heatsinks are 10mm x 10mm.
8. Same as Note (6), except both heatsinks are 15mm x 15mm.
9. Thermal resistance from junction to solder-point at the end of each lead on Pin 5 (V
CC
) and Pin 6 (GND).
ZXGD3104N8
Document Number DS35546
Rev. 2 - 2
3 of 13
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November 2015
© Diodes Incorporated
ZXGD3104N8
Thermal Derating Curve
Max Power Dissipation (W)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100 120 140 160
Minimum
Layout
15mm x 15mm
10mm x 10mm
5mm x 5mm
Junction Temperature (°C)
Derating Curve
ESD Rating
Characteristic
ESD for Human Body Model
ESD for Machine Model
Value
2,000
300
Unit
V
ZXGD3104N8
Document Number DS35546
Rev. 2 - 2
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November 2015
© Diodes Incorporated
ZXGD3104N8
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
I
Q
V
T
V
G(off)
V
G
Min
—
-16
0
12.5
17
175
11
335
530
35
Typ
5.16
-10
0.73
14
18
250
15
480
760
50
Max
—
0
1.0
V
CC
V
CC
325
20
625
990
65
Unit
mA
mV
V
V
D
≥ 0V
V
G
= 1V
V
D
≥ 1V
V
D
= -50mV
V
D
= -100mV
—
ns
Test Condition
V
CC
= 19V; R
BIAS
= 6.3kΩ; R
REF
= 8.5kΩ
Characteristic
Input and Supply
Quiescent Current
Gate Driver
Turn-Off Threshold Voltage (Notes 10 & 11)
(Notes 10 & 11)
Gate Output Voltage
(Notes 10 & 12)
Switching Performance
for Q
G(tot)
= 124nC (Note 13)
Turn-On Propagation Delay
t
d(rise)
Turn-Off Propagation Delay
t
d(fall)
Gate Rise Time
Gate Fall Time
Notes:
10. GATEH connected to GATEL
11. R
H
= 100kΩ, R
L
= O/C
12. R
L
= 100kΩ, R
H
= O/C
13. Refer to test circuit below.
t
r
t
f
From 10% of V
G
to 10V
From 10% to 90% of V
G
Continuous Conduction Mode
Refer to Switching
Waveforms in Fig. 1
Test Circuit
ZXGD3104N8
Document Number DS35546
Rev. 2 - 2
5 of 13
www.diodes.com
November 2015
© Diodes Incorporated
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