HA2556/883
July 1994
Wideband Four Quadrant Analog
Multiplier (Voltage Output)
Description
The HA-2556/883 is a monolithic, high speed, four quadrant,
analog multiplier constructed in Intersil’ Dielectrically
Isolated High Frequency Process. The voltage output
simplifies many designs by eliminating the current-to-voltage
conversion stage required for current output multipliers. The
HA-2556/883 provides a 450V/µs output slew rate and
maintains 52MHz and 57MHz bandwidths for the X and Y
channels respectively, making it an ideal part for use in video
systems.
The suitability for precision video applications is
demonstrated further by the Y Channel 0.1dB gain flatness
to 5.0MHz, 1.5% multiplication error, -50dB feedthrough and
differential inputs with 8µA bias current. The HA-2556 also
has low differential gain (0.1%) and phase (0.1
o
) errors.
The HA-2556/883 is well suited for AGC circuits as well as
mixer applications for sonar, radar, and medical imaging
equipment. The HA-2556/883 is not limited to multiplication
applications only; frequency doubling, power detection, as
well as many other configurations are possible.
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• High Speed Voltage Output. . . . . . . . . . . 450V/µs (Typ)
• Low Multiplication error . . . . . . . . . . . . . . . . 1.5% (Typ)
• Input Bias Currents . . . . . . . . . . . . . . . . . . . . . 8µA (Typ)
• Signal Input Feedthrough . . . . . . . . . . . . . . -50dB (Typ)
• Wide Y Channel Bandwidth . . . . . . . . . . . 57MHz (Typ)
• Wide X Channel Bandwidth . . . . . . . . . . . 52MHz (Typ)
• 0.1dB Gain Flatness (V
Y
). . . . . . . . . . . . . . 5.0MHz (Typ)
Applications
• Military Avionics
• Missile Guidance Systems
• Medical Imaging Displays
• Video Mixers
• Sonar AGC Processors
• Radar Signal Conditioning
• Voltage Controlled Amplifier
• Vector Generator
Ordering Information
PART NUMBER
HA1-2556/883
TEMPERATURE
RANGE
-55
o
C to +125
o
C
PACKAGE
16 Lead CerDIP
Pinout
HA-2556/883
(CERDIP)
TOP VIEW
GND 1
REF
V
REF
V
YIO
B
V
YIO
A
V
Y
+
V
Y
-
2
3
4
5
Y
X
Simplified Schematic
V+
16 V
XIO
A
15 V
XIO
B
14 NC
13 V
X
+
12 V
X
-
11 V+
Σ
VBIAS
V
BIAS
V+
V
X
+
V
X
-
V
Y
+
V
Y
-
V
Z
+
OUT
6
+
-
Z
V- 7
V
OUT
8
10 V
Z
-
9 V
Z
+
+
REF
V
Z
-
-
V
XIO
A
V
XIO
B
GND
V
YIO
A
V
YIO
B
V-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
8-7
Spec Number
511063-883
File Number
3619
Specifications HA2556/883
Absolute Maximum Ratings
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Output Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±40mA
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . < 2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
o
C
Storage Temperature Range . . . . . . . . . . . . . . -65
o
C
≤
T
A
≤
+150
o
C
Max Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Thermal Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
CerDIP Package . . . . . . . . . . . . . . . . . . .
82
27
o
C/W
o
C
Maximum Package Power Dissipation at +75
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.22W
Package Power Dissipation Derating Factor above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage (±V
S
)
. . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Operating Temperature Range . . . . . . . . . . . . -55
o
C
≤
T
A
≤
+125
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
F
= 50Ω, R
L
= 1kΩ, C
L
= 20pF, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
Linearity Error
LE4V
LE5V
Input Offset Voltage (V
X
)
V
XIO
V
Y
, V
X
=
±4V
V
Y
, V
X
=
±5V
V
Y
=
±5V
1
1
1
2, 3
Input Bias Current (V
X
)
I
B
(V
X
)
V
X
= 0V, V
Y
= 5V
1
2, 3
Input Offset Current (V
X
)
I
IO
(V
X
)
V
X
= 0V, V
Y
= 5V
1
2, 3
Common Mode (V
X
)
Rejection Ratio
Power Supply (V
X
)
Rejection Ratio
CMRR (V
X
)
V
X
CM =
±10V
V
Y
= 5V
V
CC
= +12V to +17V
V
Y
= 5V
V
EE
= -12V to -17V
V
Y
= 5V
V
X
=
±5V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
Input Bias Current (V
Y
)
I
B
(V
Y
)
V
Y
= 0V, V
X
= 5V
1
2, 3
Input Offset Current (V
Y
)
I
IO
(V
Y
)
V
Y
= 0V, V
X
= 5V
1
2, 3
Common Mode (V
Y
)
Rejection Ratio
Power Supply (V
Y
)
Rejection Ratio
CMRR (V
Y
)
V
Y
CM = +9V, -10V
V
X
= 5V
V
CC
= +12V to +17V
V
X
= 5V
V
EE
= -12V to -17V
V
X
= 5V
1
2, 3
1
2, 3
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+25
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-3
-6
-0.5
-1
-15
-25
-15
-25
-2
-3
65
65
65
65
45
45
-15
-25
-15
-25
-2
-3
65
65
65
65
45
45
MAX
3
6
0.5
1
15
25
15
25
2
3
-
-
-
-
-
-
15
25
15
25
2
3
-
-
-
-
-
-
UNITS
%FS
%FS
%FS
%FS
mV
mV
µA
µA
µA
µA
dB
dB
dB
dB
dB
dB
mV
mV
µA
µA
µA
µA
dB
dB
dB
dB
dB
dB
PARAMETERS
Multiplication Error
SYMBOL
ME
CONDITIONS
V
Y
, V
X
=
±5V
+PSRR (V
X
)
-PSRR (V
X
)
Input Offset Voltage (V
Y
)
V
YIO
+PSRR (V
Y
)
-PSRR (V
Y
)
Spec Number
8-8
511063-883
Specifications HA2556/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
Device Tested at: V
SUPPLY
=
±15V,
R
F
= 50Ω, R
L
= 1kΩ, C
L
= 20pF, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
Input Bias Current (V
Z
)
I
B
(V
Z
)
V
X
= 0V, V
Y
= 0V
1
2, 3
Input Offset Current (V
Z
)
I
IO
(V
Z
)
V
X
= 0V, V
Y
= 0V
1
2, 3
Common Mode (V
Z
)
Rejection Ratio
Power Supply (V
Z
)
Rejection Ratio
CMRR (V
Z
)
V
Z
CM =
±10V
V
X
= 0V, V
Y
= 0V
V
CC
= +12V to +17V
V
X
= 0V, V
Y
= 0V
V
EE
= -12V to -17V
V
X
= 0V, V
Y
= 0V
V
OUT
= 5V, R
L
= 250Ω
1
2, 3
1
2, 3
1
2, 3
1
2, 3
-I
OUT
V
OUT
= 5V, R
L
= 250Ω
1
2, 3
Output Voltage Swing
+V
OUT
R
L
= 250Ω
1
2, 3
-V
OUT
R
L
= 250Ω
1
2, 3
Supply Current
±I
CC
V
X
, V
Y
= 0V
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-15
-25
-15
-25
-2
-3
65
65
65
65
45
45
20
20
-
-
5
5
-
-
-
-
MAX
15
25
15
25
2
3
-
-
-
-
-
-
-
-
-20
-20
-
-
-5
-5
22
22
UNITS
mV
mV
µA
µA
µA
µA
dB
dB
dB
dB
dB
dB
mA
mA
mA
mA
V
V
V
V
mA
mA
PARAMETERS
Input Offset Voltage (V
Z
)
SYMBOL
V
ZIO
CONDITIONS
V
X
= 0V, V
Y
= 0V
+PSRR (V
Z
)
-PSRR (V
Z
)
Output Current
+I
OUT
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Specifications in Table 3.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested: at V
SUPPLY
=
±15V,
R
F
= 50Ω, R
L
= 1kΩ, C
L
= 20pF, Unless Otherwise Specified.
LIMITS
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
V
Y
, V
Z
CHARACTERISTICS (NOTE 2)
Bandwidth
Gain Flatness
AC Feedthrough
BW(V
Y
)
GF(V
Y
)
V
ISO
-3dB, V
X
= 5V,
V
Y
≤
200mV
P-P
0.1dB, V
X
= 5V,
V
Y
≤
200mV
P-P
f
O
= 5MHz,
V
Y
= 200mV
P-P
V
X
= Nulled
V
Y
= 200mV Step,
V
X
= 5V,
10% to 90% pts
1
1
1, 3
+25
o
C
+25
o
C
+25
o
C
30
4.0
-
-
-
-45
MHz
MHz
dB
Rise and Fall Time
T
R
, T
F
1
1
+25
o
C
+125
o
C, -55
o
C
-
-
9.5
10
ns
ns
Spec Number
8-9
511063-883
Specifications HA2556/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
Device Tested: at V
SUPPLY
=
±15V,
R
F
= 50Ω, R
L
= 1kΩ, C
L
= 20pF, Unless Otherwise Specified.
LIMITS
PARAMETERS
Overshoot
SYMBOL
+OS, -OS
CONDITIONS
V
Y
= 200mV step,
V
X
= 5V
V
Y
= 10V step,
V
X
= 5V
V
Y
=
±5V,
V
X
= 0V
NOTES
1
1
1
1
1
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
MIN
-
-
410
360
650
MAX
35
50
-
-
-
UNITS
%
%
V/µs
V/µs
kΩ
Slew Rate
+SR, -SR
Differential Input
Resistance
V
X
CHARACTERISTICS
Bandwidth
Gain Flatness
AC Feedthrough
R
IN
(V
Y
)
BW (V
X
)
GF (V
X
)
V
ISO
-3dB, V
Y
= 5V,
V
X
≤
200mV
P-P
0.1dB, V
Y
= 5V,
V
X
≤
200mV
P-P
f
O
= 5MHz,
V
X
= 200mV
P-P
V
Y
= Nulled
V
X
= 200mV step,
V
Y
= 5V,
10% to 90% pts
V
X
= 200mV step,
V
Y
= 5V
V
X
= 10V step,
V
Y
= 5V
V
X
=
±5V,
V
Y
= 0V
1
1
1, 3
+25
o
C
+25
o
C
+25
o
C
30
2.0
-
-
-
-45
MHz
MHz
dB
Rise & Fall Time
T
R
, T
F
1
1
1
1
1
1
1
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
-
-
-
-
410
360
650
9.5
10
35
50
-
-
-
ns
ns
%
%
V/µs
V/µs
kΩ
Overshoot
+OS, -OS
Slew Rate
+SR, -SR
Differential Input
Resistance
R
IN
(V
X
)
OUTPUT CHARACTERISTICS
Output Resistance
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. V
Z
AC characteristics may be implied from V
Y
due to the use of V
Z
as feedback in the test circuit.
3. Offset voltage applied to minimize feedthrough signal.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only. No other subgroups are included in PDA.
SUBGROUPS (SEE TABLE 1)
-
1 (Note 1), 2, 3
1, 2, 3
1
R
OUT
V
Y
=
±5V,
V
X
= 5V
R
L
= 1kΩ to 250Ω
1
+25
o
C
-
1
Ω
Spec Number
8-10
511063-883
HA2556/883
Die Characteristics
DIE DIMENSIONS:
71mils x 100mils x 19mils
±
1mils
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride (Si
3
N
4
) over Silox (SiO
2
, 5% Phos)
Silox Thickness: 12k
Å
±
2k
Å
Nitride Thickness: 3.5k
Å
±
1.5k
Å
TRANSISTOR COUNT:
84
SUBSTRATE POTENTIAL:
V-
WORST CASE CURRENT DENSITY:
0.47 x 10
5
A/cm
2
Metallization Mask Layout
HA-2556/883
V
REF
(2)
GND
(1)
V
XIO
A
(16)
V
XIO
B
(15)
V
YIO
B (3)
V
YIO
A (4)
(13) V
X
+
V
Y
+ (5)
(12) V
X
-
V
Y
- (6)
(11) V+
(7)
V-
(8)
V
OUT
(9)
V
Z
+
(10)
V
Z
-
Spec Number
8-11
511063-883
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