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Datasheet> All Categories > Discrete semiconductor> diode> FR70KR05
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FR70KR05

Description
Rectifiers 800V 70A REV Leads Fast Recovery
CategoryDiscrete semiconductor    diode   
File Size732KB，4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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FR70KR05 Overview

Rectifiers 800V 70A REV Leads Fast Recovery

FR70KR05 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerGeneSiC
package instructionO-MUPM-D1
Reach Compliance Codecompliant
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-203AB
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current870 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current70 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum repetitive peak reverse voltage800 V
Maximum reverse current25 µA
Maximum reverse recovery time0.5 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER

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FR70K05 thru FR70MR05
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types from 800 V to 1000 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
DO-5 Package
V
RRM
= 800 V - 1000 V
I
F
= 70 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive p
p
peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤ 100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
FR70K(R)05
800
560
800
70
870
-55 to 150
-55 to 150
FR70M(R)05
1000
700
1000
70
870
-55 to 150
-55 to 150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 70 A, T
j
= 25 °C
V
R
= 100 V, T
j
= 25 °C
V
R
= 100 V, T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
FR70K(R)05
1.0
25
15
FR70M(R)05
1.0
25
15
Unit
V
μA
mA
Recovery Time
Maximum reverse recovery
time
T
RR
500
500
nS
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1

FR70KR05 Related Products

FR70KR05 FR70MR05
Description Rectifiers 800V 70A REV Leads Fast Recovery Rectifiers 1000V 70A REV Leads Fast Recovery
Is it lead-free? Lead free Lead free
Maker GeneSiC GeneSiC
package instruction O-MUPM-D1 O-MUPM-D1
Reach Compliance Code compliant compliant
application FAST RECOVERY FAST RECOVERY
Shell connection ANODE ANODE
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V
JEDEC-95 code DO-203AB DO-203AB
JESD-30 code O-MUPM-D1 O-MUPM-D1
Maximum non-repetitive peak forward current 870 A 870 A
Number of components 1 1
Phase 1 1
Number of terminals 1 1
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 70 A 70 A
Package body material METAL METAL
Package shape ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT
Maximum repetitive peak reverse voltage 800 V 1000 V
Maximum reverse current 25 µA 25 µA
Maximum reverse recovery time 0.5 µs 0.5 µs
surface mount NO NO
Terminal form SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER

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