TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices
2N720A
2N1893
2N1893S
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage (R
BE
= 10
Ω)
Collector Current
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Junction Temperature Range
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
V
CER
I
C
P
T
T
J
,
T
srg
All Devices
80
120
7.0
100
500
2N720A 2N1893, S
0.5
0.8
1.8
3.0
-65 to +200
Units
Vdc
Vdc
Vdc
Vdc
mAdc
W
0
TO-18 (TO-206AA)*
2N720A
C
THERMAL CHARACTERISTICS
Characteristics
Symbol 2N720A 2N1893, S
Thermal Resistance, Junction-to-Case
97
58
R
θ
JC
1) Derate linearly 2.86 mW/
0
C for 2N720A, 4.57 mW/
0
C for 2N1893, S T
A
> 25
0
C
2) Derate linearly 10.3 mW/
0
C for 2N720A, 17.2 mW/
0
C for 2N1893, S T
C
> 25
0
C
0
Unit
C/W
TO-5*
2N1893, 2N1893S
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
V
(BR)
CER
I
CBO
Min.
Max.
Unit
Vdc
Vdc
10
10
10
10
µAdc
ηAdc
µAdc
ηAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 30 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc, R
BE
= 10
Ω
Collector-Base Cutoff Current
V
CB
= 120 Vdc
V
CB
= 90 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
V
EB
= 5.0 Vdc
80
100
I
EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N720A; 2N1893; 2N1893S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
Base-Emitter Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
h
FE
20
35
40
120
5.0
1.3
Vdc
Vdc
V
CE(sat)
V
BE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 10 Vdc, f = 20 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
V
CE
=5.0 Vdc, I
C
= 1.0 mAdc
V
CE
=10 Vdc, I
C
= 5.0 mAdc, f = 1.0 kHz
Small-Signal Short-Circuit Input Impedance
V
CB
= 10 Vdc, I
C
= 5.0 mAdc
Small-Signal Short-Circuit Output Admittance
V
CB
= 10 Vdc, I
C
= 5.0 mAdc
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
h
fe
3.0
h
fe
h
ib
h
ob
C
obo
2
35
45
4.0
10
100
8.0
0.5
15
Ω
µΩ
P
F
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See Figure 3 of MIL-PRF-19500/182)
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
t
on +
t
off
30
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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