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BLF6G20S-45118

Description
RF MOSFET Transistors N-CH 65V 13A Trans MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size1023KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF6G20S-45118 Overview

RF MOSFET Transistors N-CH 65V 13A Trans MOSFET

BLF6G20S-45118 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current13 A
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance200 mOhms
TechnologySi
Gain19.2 dB
Output Power2.5 W
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-608B-3
PackagingReel
PackagingMouseReel
PackagingCut Tape
Channel ModeEnhancement
ConfigurationSingle
Operating Frequency1.8 GHz to 2 GHz
Factory Pack Quantity100
TypeRF Power MOSFET
Vgs - Gate-Source Voltage13 V
Vgs th - Gate-Source Threshold Voltage1.9 V
BLF6G20-45; BLF6G20S-45
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
1805 to 1880
V
DS
(V)
28
P
L(AV)
(W)
2.5
G
p
(dB)
19.2
D
(%)
14
ACPR
(dBc)
50
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz,
a supply voltage of 28 V and an I
Dq
of 360 mA:
Average output power = 2.5 W
Power gain = 19.2 dB (typ)
Efficiency = 14 %
ACPR =
50
dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)

BLF6G20S-45118 Related Products

BLF6G20S-45118 BLF6G20-45112 BLF6G20S-45112
Description RF MOSFET Transistors N-CH 65V 13A Trans MOSFET RF MOSFET Transistors LDMOS TNS RF MOSFET Transistors Trans MOSFET N-CH 65V 13A
Product Category RF MOSFET Transistors RF MOSFET Transistors RF MOSFET Transistors
Manufacturer NXP NXP NXP
RoHS Details Details Details
Transistor Polarity N-Channel N-Channel N-Channel
Id - Continuous Drain Current 13 A 13 A 13 A
Vds - Drain-Source Breakdown Voltage 65 V 65 V 65 V
Rds On - Drain-Source Resistance 200 mOhms 200 mOhms 200 mOhms
Technology Si Si Si
Maximum Operating Temperature + 150 C + 150 C + 150 C
Mounting Style SMD/SMT SMD/SMT SMD/SMT
Package / Case SOT-608B-3 SOT-539A-5 SOT-608B-3
Channel Mode Enhancement Enhancement Enhancement
Configuration Single Single Single
Factory Pack Quantity 100 60 60
Type RF Power MOSFET RF Power MOSFET RF Power MOSFET
Vgs - Gate-Source Voltage 13 V 13 V 13 V
Gain 19.2 dB - 19.2 dB
Output Power 2.5 W - 2.5 W
Packaging Cut Tape Tube Tube
Operating Frequency 1.8 GHz to 2 GHz - 1.8 GHz to 2 GHz
Vgs th - Gate-Source Threshold Voltage 1.9 V - 1.9 V
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