BCR148...
NPN Silicon Digital Transistor
•
Switching circuit, inverter, interface circuit
driver circuit
•
Built in bias resistor (R
1
=47 kΩ,
R
2
=47 kΩ)
•
BCR148S: Two internally isolated
transistors with good matching
in one multichip package
•
BCR148S: For orientation in reel see
package information below
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BCR148/F
BCR148W
C
3
BCR148S
C1
6
B2
5
E2
4
R
1
R
1
R
2
TR2
R
1
R
2
TR1
R
2
1
B
2
E
EHA07184
1
E1
2
B1
3
C2
EHA07174
Type
BCR148
BCR148F
BCR148S
BCR148W
1
Pb-containing
Marking
WEs
WEs
WEs
WEs
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
Package
SOT23
TSFP-3
SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
package may be available upon special request
1
2009-06-16
BCR148...
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR148,
T
S
≤
102°C
BCR148F,
T
S
≤
128°C
BCR148S,
T
S
≤
115°C
BCR148W,
T
S
≤
124°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BCR148
BCR148F
BCR148S
BCR148W
1
For
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
Value
50
50
80
10
100
200
250
250
250
Unit
V
mA
mW
T
j
T
stg
Symbol
R
thJS
150
-65 ... 150
Value
≤
240
≤
90
≤
140
≤
105
°C
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2009-06-16
BCR148...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
50
V
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Collector-base cutoff current
V
CB
= 40 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 10 V,
I
C
= 0
DC current gain
1)
I
C
= 5 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on voltage
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
C
cb
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R
1
R
1
/R
2
50
-
-
70
-
0.8
1
32
0.9
-
-
-
-
-
-
-
-
-
47
1
100
3
-
100
164
-
0.3
1.5
3
62
1.1
-
-
kΩ
-
MHz
pF
nA
µA
-
V
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1
Pulse
test: t < 300µs; D < 2%
3
2009-06-16
BCR148...
DC current gain
h
FE
=
ƒ(
I
C
)
V
CE
= 5V (common emitter configuration)
10
3
Collector-emitter saturation voltage
V
CEsat
=
ƒ(
I
C
),
I
C
/I
B
= 20
0.5
V
0.4
V
CEsat
h
FE
10
2
0.35
0.3
0.25
0.2
10
1
-40 °C
-25 °C
25 °C
85 °C
125 °C
0.15
0.1
0.05
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
0 -4
10
10
-3
10
-2
A
10
-1
0
-3
10
10
-2
A
10
-1
I
C
I
C
Input on Voltage
V
i
(on)
=
ƒ
(
I
C
)
V
CE
= 0.3V (common emitter configuration)
10
2
Input off voltage
V
i(off)
=
ƒ(
I
C
)
V
CE
= 5V (common emitter configuration)
10
1
V
V
i(off)
V
i(on)
10
1
-40 °C
-25 °C
25 °C
85 °C
125 °C
V
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
0
10
0
10
-1 -5
10
10
-4
10
-3
10
-2
A
10
-1
10
-1 -5
10
10
-4
10
-3
10
-2
A
10
-1
I
C
I
C
4
2009-06-16
BCR148...
Total power dissipation
P
tot
=
ƒ(
T
S
)
BCR148
300
mW
Total power dissipation
P
tot
=
ƒ(
T
S
)
BCR148F
300
mW
250
225
250
225
P
tot
175
150
125
100
75
50
25
0
0
15
30
45
60
75
90 105 120
°C
150
P
tot
200
200
175
150
125
100
75
50
25
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Total power dissipation
P
tot
=
ƒ(
T
S
)
BCR148S
300
mW
Total power dissipation
P
tot
=
ƒ(
T
S
)
BCR148W
300
mW
250
225
250
225
P
tot
175
150
125
100
75
50
25
0
0
15
30
45
60
75
90 105 120
°C
150
P
tot
200
200
175
150
125
100
75
50
25
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
5
2009-06-16
Power technology
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