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BLS6G3135-120

Description
RF MOSFET Transistors LDMOS TNS
CategoryDiscrete semiconductor    The transistor   
File Size70KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLS6G3135-120 Overview

RF MOSFET Transistors LDMOS TNS

BLS6G3135-120 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionROHS COMPLIANT, CERAMIC PACKAGE-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)7.2 A
Maximum drain current (ID)7.2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandS BAND
JESD-30 codeR-CDSO-N2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
BLS6G3135-120;
BLS6G3135S-120
LDMOS S-Band radar power transistor
Rev. 02 — 29 May 2008
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C; t
p
= 300
µ
s;
δ
= 10 %; I
Dq
= 100 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
(GHz)
3.1 to 3.5
V
DS
(V)
32
P
L
(W)
120
G
p
(dB)
11
η
D
(%)
43
t
r
(ns)
20
t
f
(ns)
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an I
Dq
of 100 mA, a t
p
of up to 300
µs
with
δ
of 10 %:
N
Output power = 120 W
N
Gain = 11 dB
N
Efficiency = 43 %
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (3.1 GHz to 3.5 GHz)
I
Internally matched for ease of use
I
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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