DMG4N65CTI
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
650V
R
DS(ON)
3.0Ω@V
GS
= 10V
Package
ITO220-3
I
D
T
C
= 25°C
4.0 A
Features
•
•
•
•
•
•
Low Input Capacitance
High BVDss rating for power application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCE INFORMATIO
Description
This new generation complementary MOSFET features low on-
resistance and fast switching, making it ideal for high efficiency power
management applications.
Mechanical Data
•
•
•
•
•
•
Case: ITO220-AB
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish-Matte Tin annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Applications
•
•
•
•
Motor control
Backlighting
DC-DC Converters
Power management functions
D
ITO-220AB
G
S
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information
(Note 4)
Part Number
DMG4N65CTI
Notes:
Case
ITO220-AB
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
4N65CTI
YYWW
4N65CTI = Product Type Marking Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 12 = 2012)
WW = Week (01 - 53)
DMG4N65CTI
Document number: DS36122 Rev. 1 - 2
1 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMG4N65CTI
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note
T
C
= +25°C
Steady
State
5,6) V
GS
= 10V
T
C
= +70°C
Pulsed Drain Current (Note 7)
Avalanche Current (Note 8 ) V
DD
= 100V, V
GS
= 10V, L = 60mH
Repetitive avalanche energy (Note 7)
Symbol
V
DSS
V
GSS
I
D
I
DM
I
AS
E
AS
Value
650
±30
4.0
3.0
6
3.9
456
Unit
V
V
A
A
A
mJ
ADVANCE INFORMATIO
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Thermal Resistance, Junction to Case @T
A
= +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
R
θJC
T
J
,
T
STG
Max
8.35
12.36
10.69
-55 to +150
Unit
W
°C/W
°C/W
°C
Electrical Characteristics
@ T
A
= 25°C unless otherwise stated
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
650
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
2.1
3.7
0.7
900
50
1.1
2.4
13.5
2.7
3.8
15.1
13.8
40
16
515
2330
Max
-
1.0
±100
5
3.0
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
Ω
S
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 650V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 2A
V
DS
= 40V, I
D
= 2A
V
GS
= 0V, I
S
= 1A
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 10V, V
DS
= 520V,
I
D
= 4A
V
GS
= 10V, V
DS
= 325V,
R
G
= 25Ω, I
D
= 4A
dI/dt = 100A/μs, V
DS
= 100V,
I
F
= 4A
pF
Ω
nC
ns
ns
ns
ns
ns
nC
5. Device mounted on an infinite heatsink
6. Drain current limited by maximum junction temperature.
7. Repetitive rating, pulse width limited by junction temperature.
8. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
DMG4N65CTI
Document number: DS36122 Rev. 1 - 2
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMG4N65CTI
4.0
3.5
I
D
, DRAIN CURRENT (A)
10
V
DS
= 10V
2.5
2.0
1.5
1.0
0.5
0
0
8
12
16
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
4
20
I
D
, DRAIN CURRENT (A)
3.0
1
ADVANCE INFORMATIO
0.1
T
A
= 150°C
T
A
= 125°C
0.01
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.001
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
6
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
4
V
GS
= 10V
T
A
= 150°C
3
V
GS
= 10V
2
V
GS
= 20V
T
A
= 125°C
T
A
= 85°C
1
T
A
= 25°C
T
A
= -55°C
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
1
2
3
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
4
3.0
2.5
V
GS
= 15V
I
D
= 4A
3.0
2.5
V
GS
= 15 V
I
D
= 4A
V
GS
= 15V
I
D
= 4A
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
2.0
V
GS
= 10V
I
D
= 2A
2.0
V
GS
= 10V
I
D
= 2A
V
GS
= 10V
I
D
= 2A
1.5
1.5
1.0
1.0
0.5
0
-50
0.5
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 5 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMG4N65CTI
Document number: DS36122 Rev. 1 - 2
3 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMG4N65CTI
6.0
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
5.5
I
S
, SOURCE CURRENT (A)
4
5.0
4.5
I
D
= 1mA
3
ADVANCE INFORMATIO
4.0
3.5
3.0
2.5
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
2.0
-50
I
D
= 250µA
2
T
A
= 25°C
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10,000
I
DSS
, DRAIN LEAKAGE CURRENT (nA)
T
A
= 150°C
1,000
T
A
= 125°C
100
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
10
100
200
300
400
500
600
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
1
0
DMG4N65CTI
Document number: DS36122 Rev. 1 - 2
4 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMG4N65CTI
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
ADVANCE INFORMATIO
5
0
E
B
Q
B
D
°
ØP
A
A1
5
°
5
°
3
5°
5°
D1 L1
°
5°
b1 3x
A2
b 3x
e
e
3°
L
5°
5°
c
Ø P
ITO-220AB
Dim Min Typ Max
A
4.50 4.70 4.90
A1
3.04 3.24 3.44
A2
2.56 2.76 2.96
b
0.50 0.60 0.75
b1
1.10 1.20 1.35
c
0.50 0.60 0.70
D
15.67 15.87 16.07
D1
8.99 9.19 9.39
e
2.54
E
9.91 10.11 10.31
L
9.45 9.75 10.05
L1
15.80 16.00 16.20
P
2.98 3.18 3.38
Q
3.10 3.30 3.50
All Dimensions in mm
5°
SECTION B-B
5
5°
DMG4N65CTI
Document number: DS36122 Rev. 1 - 2
5 of 6
www.diodes.com
November 2012
© Diodes Incorporated
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