HA2546/883
July 1994
Wideband Two Quadrant Analog
Multiplier (Voltage Output)
Description
The HA-2546/883 is a monolithic, high speed, two quadrant,
analog multiplier constructed in the Intersil Dielectrically Iso-
lated High Frequency Process. The HA-2546/883 has a volt-
age output with a 30MHz signal bandwidth, 300V/µs slew
rate and a 17MHz control input bandwidth. High bandwidth
and slew rate make this part an ideal component for use in
video systems. The suitability for precision video applica-
tions is demonstrated further by the 0.1dB gain flatness at
5MHz, 1.6% multiplication error, -52dB feedthrough and dif-
ferential inputs with 1.2µA bias currents. The HA-2546/883
also has low differential gain (0.1% typ.) and phase (0.1
o
typ.) errors.
The HA-2546/883 is well suited for AGC circuits as well as
mixer applications for sonar, radar, and medical imaging
equipment. The voltage output of the HA-2546/883 simplifies
many designs by eliminating the current-to-voltage conver-
sion stage required for current output multipliers.
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• High Speed Voltage Output. . . . . . . . . . . 300V/µs (Min)
• Low Multiplication Error . . . . . . . . . . . . . . . .3.0% (Max)
1.6% (Typ)
• Input Bias Currents . . . . . . . . . . . . . . . . . . . . 5µA (Max)
1.2µA (Typ)
• Signal Input Feedthrough . . . . . . . . . . . . . . -52dB (Typ)
• Wide Signal Bandwidth . . . . . . . . . . . . . . . 30MHz (Typ)
• Wide Control Bandwidth . . . . . . . . . . . . . . 17MHz (Typ)
• Gain Flatness to 5MHz. . . . . . . . . . . . . . . . 0.10dB (Typ)
Applications
• Military Avionics
• Missile Guidance Systems
• Medical Imaging Displays
• Video Mixers
• Sonar AGC Processors
Ordering Information
PART NUMBER
HA1-2546/883
HA4-2546/883
TEMPERATURE
RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
PACKAGE
16 Lead CerDIP
20 Lead Ceramic LCC
• Radar Signal Conditioning
• Voltage Controlled Amplifier
• Vector Generator
Pinouts
HA-2546/883
(CERDIP)
TOP VIEW
V
REF
HA-2546/883
(CLCC)
TOP VIEW
GA A
20
GA C
19
18 GA B
17 V
X
+
16 NC
15 V
X
-
14 V+
9
V-
10
V
OUT
11
NC
12
V
Z
+
13
V
Z
-
GND
2
REF
V
REF
V
YIO
B
V
YIO
A
V
Y
+
V
Y
-
2
3
+
4
5
6
+
Y
X
15 GA C
14 GA B
13 V
X
+
V
YIO
B
V
YIO
A
NC
V
Y
+
V
Y
-
4
5
6
7
8
3
1
-
Σ
12 V
X
-
11 V+
-
+
-
Z
V- 7
V
OUT
8
-
+
10 V
Z
-
9 V
Z
+
NC
GND 1
16 GA A
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
8-3
Spec Number
511050-883
File Number
2444.1
Specifications HA2546/883
Absolute Maximum Ratings
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Storage Temperature Range . . . . . . . . . . . . . . -65
o
C
≤
T
A
≤
+150
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
CerDIP Package . . . . . . . . . . . . . . . . . . . . . 80
25
o
C/W
o
C/W
Ceramic LCC . . . . . . . . . . . . . . . . . . . . . . . . 61
12
o
C/W
Maximum Package Power Dissipation
CerDIP Package at +75
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W
Ceramic LCC Package at +75
o
C. . . . . . . . . . . . . . . . . . . . . 1.64W
Package Power Dissipation Derating Factor above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/
o
C
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Operating Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . ±8V
to
±15V
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
LOAD
= 1kΩ, C
LOAD
= 50pF, Unless Otherwise Specified.
GROUP A
SUBGROU
PS
1
2, 3
Scale Factor Error
Common Mode Range
SF
+CMR
-CMR
Input Offset Voltage (V
Y
)
Input Bias Current (V
Y
)
Input Offset Current (V
Y
)
Common Mode (V
Y
)
Rejection Ratio
V
IO
(V
Y
)
I
B
(V
Y
)
I
IO
(V
Y
)
+CMRR(V
Y
)
-CMRR(V
Y
)
Input Offset Voltage (V
X
)
Input Bias Current (V
X
)
Input Offset Current (V
X
)
Input Offset Voltage (V
Z
)
Output Voltage Swing
V
IO
(V
X
)
I
B
(V
X
)
I
IO
(V
X
)
V
IO
(V
Z
)
+V
OUT
-V
OUT
Output Current
+I
OUT
-I
OUT
V
CM
= 0V
V
CM
= 0V
V
CM
= 0V
V
Y
= 0 to +5V, V
X
= +2V
V
Y
= 0 to -5V, V
X
= +2V
V
CM
= 0V
V
CM
= 0V
V
CM
= 0V
V
X
= 0V, V
Y
= 0V
V
Y
= +5V, V
X
= +2.5V
V
Y
= -5V, V
X
= +2.5V
V
Y
= +5V, V
X
= +2.5V
V
Y
= -5V, V
X
= +2.5V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C,
+125
o
C,
+125
o
C,
+125
o
C,
-55
o
C
-55
o
C
-55
o
C
-55
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25 C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
o
PARAMETERS
Multiplication Error
SYMBOL
ME
V
Y
=
±5V
CONDITIONS
MIN
-3
-5
-5
-5
5
5
-
-
-10
-15
-15
-20
-2
-3
60
60
60
60
-2
-15
-2
-5
-2
-3
-15
-15
5
5
-
-
20
20
-
-
MAX
3
5
5
5
-
-
-5
-5
10
15
15
20
2
3
-
-
-
-
2
15
2
5
2
3
15
15
-
-
-5
-5
-
-
-20
-20
UNITS
%FS
%FS
%
%
V
V
V
V
mV
mV
µA
µA
µA
µA
dB
dB
dB
dB
mV
mV
µA
µA
µA
µA
mV
mV
V
V
V
V
mA
mA
mA
mA
Spec Number
8-4
511050-883
Specifications HA2546/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
Device Tested at: V
SUPPLY
=
±15V,
R
LOAD
= 1kΩ, C
LOAD
= 50pF, Unless Otherwise Specified.
GROUP A
SUBGROU
PS
1
2, 3
1
2, 3
1
2, 3
-I
CC
V
X
= V
Y
= 0V, I
OUT
= 0mA
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
58
58
58
58
29
29
-
-
MAX
-
-
-
-
-
-
-29
-29
UNITS
dB
dB
dB
dB
mA
mA
mA
mA
PARAMETERS
Power Supply Rejection
Ratio
SYMBOL
+PSRR
-PSRR
CONDITIONS
∆
V
S
= 3V, V+ = +15V, V- = -15V,
V+ = +12V, V- = -15V
∆
V
S
= 3V, V+ = +15V, V- = -15V,
V+ = +15V, V- = -12V
V
X
= V
Y
= 0V, I
OUT
= 0mA
Quiescent Power Supply
Current
+I
CC
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Specifications in Table 3.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
LOAD
= 1kΩ, C
LOAD
= 50pF, Unless Otherwise Specified.
LIMITS
PARAMETER
Slew Rate
SYMBOL
+SR
CONDITIONS
V
OUT
= -5V to +5V, V
X
= 2V
DC
V
OUT
= +5V to -5V, V
X
= 2V
DC
V
OUT
= -100mV to +100mV
V
X
= 2V
DC
V
OUT
= +100mV to -100mV
V
X
= 2V
DC
V
OUT
= -100mV to +100mV
V
X
= 2V
DC
V
OUT
= +100mV to -100mV
V
X
= 2V
DC
V
PEAK
= 5V, V
X
= 2V
DC
NOTES
1
1
-SR
1
1
Rise and Fall Time
TR
1, 3
1, 3
1, 3
1, 3
1
1
1
1
1, 2
1, 2
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
PEAK
).
3. Measured between 10% and 90% points.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-in)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLE 1)
1
1(Note 1), 2, 3
1, 2, 3
1
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25 C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125 C, -55 C
+25 C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
o
o
o
o
MIN
300
300
300
300
-
-
-
-
-
-
-
-
9.5
9.5
MAX
-
-
-
-
15
17
15
17
30
30
30
30
-
-
UNITS
V/µs
V/µs
V/µs
V/µs
ns
ns
ns
ns
%
%
%
%
MHz
MHz
TF
Overshoot
+OS
-OS
Full Power Bandwidth
FPBW
Spec Number
8-5
511050-883
HA2546/883
Die Characteristics
DIE DIMENSIONS:
79.9mils x 119.7mils x 19mils
±
1mils
METALLIZATION:
Type: Al, 1%Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride (Si
3
N
4
) over Silox (SiO
2
, 5% Phos)
Silox Thickness: 12k
Å
±
1.5k
Å
Nitride Thickness: 3.5k
Å
±
1.5k
Å
WORST CASE CURRENT DENSITY:
0.72 x 10
5
A/cm
2
TRANSISTOR COUNT:
87
Metallization Mask Layout
HA-2546/883
V
REF
(2)
GND
(1)
GA A
(16)
GA C
(15)
V
YIO
B
(3)
(14)
GA B
V
YIO
A
(4)
(13)
V
X
+
V
Y
+ (5)
(12)
V
X
-
V
Y
- (6)
(11)
V+
(7)
V-
(8)
V
OUT
(9)
V
Z
+
(10)
V
Z
-
Spec Number
8-6
511050-883
Specifications HA2546/883
Test Circuit
L
MSR
H
K5
V2
V1
K1
M2
GND
V
REF
V
ADJB
V
ADJA
K6
K9
- 15V
0.001
µF
50Ω
K7A
K8
1K
50Ω
M1
K7B
25
µF
100Ω
1K
50pF
K11
K10
10
µF
1000
pF
1000
pF
K2
V
Y+
V
Y-
V
EE
V
OUT
50Ω
1
2
3
4
DUT
5
6
7
8
12
11
10
9
16
15
14
13
G
ADJA
G
ADJC
G
ADJB
V
X+
V
X-
V
CC
V
Z-
V
Z+
10
µF
0.001
µF
K4
+15V
K3
V2
For Detailed Information, Refer to HA-2546/883 Test Tech Brief
Test Waveforms
LARGE AND SMALL SIGNAL RESPONSE TEST CIRCUIT
1
REF
NC
NC
NC
V
Y
+
2
3
+
4
5
6
V-
7
8
+
Y
X
16 NC
15
14
13 V
X
+
-
Σ
12
11 V+
10
9
V
OUT
-
+
-
-
Z
+
50Ω
1K
50pF
Spec Number
8-7
511050-883
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