MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS
TM
OptiMOS
TM
5Power-MOSFET,25V
BSC009NE2LS5I
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
OptiMOS
TM
5Power-MOSFET,25V
BSC009NE2LS5I
1Description
Features
•Optimizedforhighperformancebuckconverters
•MonolithicintegratedSchottkylikediode
•Verylowon-resistanceR
DS(on)
@V
GS
=4.5V
•100%avalanchetested
•N-channel
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
8
7
SuperSO8
5
6
5
6
7
8
1
2
3
4
4
3
2
1
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
OSS
Q
G
(0V..4.5V)
Value
25
0.95
100
27
17
Unit
V
mΩ
A
nC
nC
S1
S2
S3
G4
8D
7D
6D
5D
Type/OrderingCode
BSC009NE2LS5I
Package
PG-TDSON-8
Marking
09NE2L5I
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.0,2015-03-10
OptiMOS
TM
5Power-MOSFET,25V
BSC009NE2LS5I
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
3
Rev.2.0,2015-03-10
OptiMOS
TM
5Power-MOSFET,25V
BSC009NE2LS5I
2Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-
-
-
-16
-
-
-55
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
100
100
100
100
40
400
50
50
16
74
2.5
150
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=4.5V,T
C
=25°C
V
GS
=4.5V,T
C
=100°C
V
GS
=10V,T
A
=25°C,R
thJA
=50K/W
1)
T
C
=25°C
T
C
=25°C
I
D
=50A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
thJA
=50K/W
1)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Continuous drain current
I
D
A
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
I
AS
E
AS
V
GS
P
tot
T
j
,T
stg
A
A
mJ
V
W
°C
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case,
top
Device on PCB,
6 cm
2
cooling area
1)
Symbol
R
thJC
R
thJC
R
thJA
Values
Min.
-
-
-
Typ.
-
-
-
Max.
1.7
20
50
Unit
K/W
K/W
K/W
Note/TestCondition
-
-
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
4
Rev.2.0,2015-03-10
OptiMOS
TM
5Power-MOSFET,25V
BSC009NE2LS5I
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Breakdown voltage temperature
coefficient
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Symbol
V
(BR)DSS
Values
Min.
25
Typ.
-
15
1.6
-
3
10
1.05
0.80
1.1
150
Max.
-
-
2
0.5
-
100
1.35
0.95
1.8
-
Unit
V
Note/TestCondition
V
GS
=0V,I
D
=1mA
dV
(BR)DSS
/dT
j
-
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
1.2
-
-
-
-
-
-
75
mV/K
I
D
=10mA,referencedto25°C
V
mA
nA
mΩ
Ω
S
V
DS
=V
GS
,I
D
=250µA
V
DS
=20V,V
GS
=0V,T
j
=25°C
V
DS
=20V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=4.5V,I
D
=30A
V
GS
=10V,I
D
=30A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=30A
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
2400
1400
130
5
5
27
4
Max.
3200
1900
-
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=12V,f=1MHz
V
GS
=0V,V
DS
=12V,f=1MHz
V
GS
=0V,V
DS
=12V,f=1MHz
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.0,2015-03-10
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