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MPSA92-AP

Description
Logic Gates Quad 2-Input
Categorysemiconductor    Discrete semiconductor   
File Size256KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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MPSA92-AP Overview

Logic Gates Quad 2-Input

MPSA92-AP Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerMCC
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-92-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max- 300 V
Emitter- Base Voltage VEBO- 5 V
Gain Bandwidth Product fT50 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current- 300 mA
DC Collector/Base Gain hfe Min25
Minimum Operating Temperature- 55 C
PackagingAmmo Pack
Pd - Power Dissipation625 mW
Factory Pack Quantity20000
Unit Weight0.016000 oz
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
MPSA92
Features
Halogen
free available upon request by adding suffix "-HF"
Through Hole Package
Operating
& Storage
Temperature: -55°C to +150°C
Marking :
A92
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
PNP Silicon High
Voltage Transistor
TO-92
A
E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=-1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-100µAdc, I
E
=0)
Emitter -Base Breakdown Voltage
(I
E
=-10µAdc, I
C
=0)
Emitt er Cutoff Current
(V
EB
=-3.0Vdc, I
C
=0)
Collector Cutoff Current
(V
CB
=-200Vdc, I
E
=0)
DC Current Gain*
(I
C
=-1.0mAdc, V
CE
=-10Vdc)
(I
C
=-10mAdc, V
CE
=-10Vdc)
(I
C
=-50mAdc, V
CE
=-10Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-20mAdc, I
B
=-2.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=-20mAdc, I
B
=-2.0mAdc)
Min
-300
-300
-5.0
-0.25
-0.25
Max
Units
Vdc
Vdc
Vdc
uA dc
uAdc
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
EBO
I
CBO
B
ON CHARACTERISTICS
h
FE
25
80
25
250
C
V
CE(sat)
V
BE(sat)
-0.5
-0.9
Vdc
Vdc
D
SMALL-SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
(I
C
=-10mAdc, V
CE
=-5Vdc, f=30MHz)
C
cb
Coll ector -Base Capacitance
(V
CB
=-20Vdc, I
E
=0, f=1 .0MHz)
*Pulse Width
300µs, Duty Cycle
2.0%
f
T
50
6.0
MHz
pF
G
E
E
B
C
B
C
MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
IC
R
q
JA
R
q
JC
PD
PD
Characteristic
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
MPSA92
–300
–300
–5.0
–300
200
83.3
625
5.0
1.5
12
Unit
Vdc
Vdc
Vdc
mAdc
°C/W
°C/W
mW
mW/°C
Watts
mW/°C
STRAIGHT LEAD BENT LEAD
BULK PACK
AMMO PACK
DIMENSIONS
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
.173
MM
MAX
.185
.185
---
.020
.145
.105
.220
MIN
4.45
4.45
12.70
0.41
3.43
2.42
4.40
MAX
4.70
4.70
---
0.63
3.68
2.67
5.60
NOTE
Straight Lead
Bent Lead
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
www.mccsemi.com
Revision:
D
1 of 3
2013/01/01

MPSA92-AP Related Products

MPSA92-AP MPSA92-BP
Description Logic Gates Quad 2-Input Bipolar Transistors - BJT 300mA 300V
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Manufacturer MCC MCC
RoHS Details Details
Mounting Style Through Hole Through Hole
Package / Case TO-92-3 TO-92-3
Transistor Polarity PNP PNP
Configuration Single Single
Collector- Emitter Voltage VCEO Max - 300 V 300 V
Emitter- Base Voltage VEBO - 5 V 5 V
Gain Bandwidth Product fT 50 MHz 50 MHz
Maximum Operating Temperature + 150 C + 150 C
DC Collector/Base Gain hfe Min 25 25
Minimum Operating Temperature - 55 C - 55 C
Packaging Ammo Pack Ammo Pack
Pd - Power Dissipation 625 mW 625 mW
Factory Pack Quantity 20000 2000
Unit Weight 0.016000 oz 0.016000 oz
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