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SB5100E-G

Description
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 0.1uF 50volts X7R 10%
CategoryDiscrete semiconductor    diode   
File Size445KB,2 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
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SB5100E-G Overview

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 0.1uF 50volts X7R 10%

SB5100E-G Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Diode typeRECTIFIER DIODE
Base Number Matches1
Low VF/ESD Leaded Schottky Barrier Rectifiers
SB520E-G thru SB5100E-G
Voltage Range:
20
to 100 V
Current:
5.0
A
"-G" : RoHS Device
FEATURES
• Low drop down voltage
• 5.0A operation at T
A
=75°C with no thermal runaway
• For use in low voltage, high frequency invertors free
wheeling and polarity protection
• Silicon epitaxial planar chips
• Electrostatic discharge (ESD) test under IEC61000-4-2
standard: >15KV (air) & 8KV (contact)
• Lead-free part, meet RoHS requirements
DO-201AD
1.0(25.4) Min.
.210(5.3)
.189(4.8)
.375(9.5)
.287(7.3)
MECHANICAL DATA
• Case: Molded plastic body DO-201AD
• Epoxy: UL94-V0 rated flame retardant
• Terminals: Solderable per MIL-STD-750 Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
• Weight: 0.04 ounces, 1.12 grams
1.0(25.4) Min.
.052(1.3)
.048(1.2)
Unit :inch(mm)
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Symbols
520E 540E 545E 550E 560E 580E 5100E
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.5” (12.7mm) lead length at T
A
=75°C,
See Figure 1
Peak Forward Surge Current
8.3mS single half sine-wave superimp osed on
rated load (JEDEC Me thod) T
L
=110°C
V
RRM
V
RMS
V
DC
20
14
2
0
40
28
40
45
30
45
50
35
50
60
42
60
80
56
80
100
70
100
Volts
Volts
Volts
I
AV
5.0
Amps
I
FSM
V
F
150
0.55
0.70
0.5
50
125
0.85
Amps
Volts
Maximum Forward Voltage at 5.0A (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
T
A
=
25°C
T
A
=100
°C
I
R
C
J
R
θJA
R
θJL
T
J
T
STG
mA
30
pF
500
35.0
15.0
-65 ~ +125
-65 ~ +150
-65 ~ +150
°C/W
°C
°C
Note 1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle
2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts
3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted 0. 500” (12.7mm ) lead length wi th 2. 5x2.5” (63.5x63.5mm ) co pper
pad.
MDS0906005A
Page 1

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