Si2327DS -T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
L = 1.0 mH
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
1.25
0.8
- 55 to 150
- 1.0
4.0
0.8
0.75
0.48
mJ
W
°C
- 0.49
- 0.39
- 1.0
- 0.6
5s
Steady State
- 200
± 20
- 0.38
- 0.31
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
t
≤
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
75
120
40
Maximum
100
166
50
°C/W
Unit
Document Number: 73240
S09-0133-Rev. B, 02-Feb-09
www.vishay.com
1
Si2327DS
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
Turn-On Time
Turn-Off Time
Body Diode Reverse Recovery Charge
t
d(on)
t
r
t
d(off)
t
f
Q
rr
V
DD
= - 100 V, R
L
= 100
Ω
I
D
≅
- 1.0 A, V
GEN
= - 10 V
R
g
= 6
Ω
I
F
= 0.5 A, dI/dt = 100 A/µs
8
11
16
11
140
12
17
25
17
200
nC
ns
Q
g
Q
gs
Q
gd
R
g
C
iss
C
oss
C
rss
V
DS
= - 25 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 100 V, V
GS
= 10 V
I
D
≅
- 0.5 A
f = 1.0 MHz
8.0
1.3
2.5
8.0
340
25
14
510
pF
Ω
12
nC
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 200 V, V
GS
= 0 V
V
DS
= - 200 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 15 V, V
GS
= 10 V
V
GS
=
- 10 V, I
D
= - 0.5 A
V
GS
= - 6.0 V, I
D
= - 0.5 A
V
DS
= - 15 V, I
D
= - 0.5 A
I
S
= - 1.0 A, V
GS
= 0 V
- 1.0
1.9
1.96
1.8
- 0.85
- 1.2
2.35
2.45
- 200
- 2.5
- 4.5
± 100
-1
- 10
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test: PW
≤
300 µs duty cycle
≤
2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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