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ZTX705STOB

Description
Darlington Transistors PNP 120V TRANS 1A 3K Gain 1W
Categorysemiconductor    Discrete semiconductor   
File Size88KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZTX705STOB Overview

Darlington Transistors PNP 120V TRANS 1A 3K Gain 1W

ZTX705STOB Parametric

Parameter NameAttribute value
Product CategoryDarlington Transistors
ManufacturerDiodes
RoHSDetails
ConfigurationSingle
Transistor PolarityPNP
Collector- Emitter Voltage VCEO Max120 V
Emitter- Base Voltage VEBO10 V
Collector- Base Voltage VCBO140 V
Maximum DC Collector Current1 A
Maximum Collector Cut-off Current0.1 uA
Pd - Power Dissipation1 W
Mounting StyleThrough Hole
Package / CaseTO-92
Maximum Operating Temperature+ 150 C
PackagingBulk
Continuous Collector Current- 1 A
DC Current Gain hFE Max3000
Height4.01 mm
Length4.77 mm
Minimum Operating Temperature- 55 C
Factory Pack Quantity4000
Width2.41 mm
Unit Weight0.016000 oz
PNP SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 3 – MAY 94
FEATURES
* 120 Volt V
CEO
* 1 Amp continuous current
* Gain of 3K at I
C
=1 Amp
* P
tot
=1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
ZTX704
ZTX705
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
= 25°C
derate above 25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX704
-120
-100
E-Line
TO92 Compatible
ZTX705
-140
-120
-10
-4
-1
1
5.7
-55 to +200
UNIT
V
V
V
A
A
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
ZTX704
MIN.
-120
-100
-10
-0.1
-10
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
-10
-0.1
-1.3
-2.5
-1.8
-1.7
3-250
ZTX705
MAX.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
UNIT
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-100V
V
CB
=-120V
V
CB
=-100V,
T
amb
=100°C
V
CB
=-120V,
T
amb
=100°C
V
CES
=-80V
V
EB
=-8V
I
C
=-1A, I
B
=-1mA*
I
C
=-2A, I
B
=-2mA*
I
C
=-1A, I
B
=-10mA*
IC=-1A, V
CE
=-5V*
MAX. MIN.
-140
-120
-10
-0.1
-10
-10
-0.1
-1.3
-2.5
-1.8
-1.7
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
V
V
V

ZTX705STOB Related Products

ZTX705STOB ZTX704
Description Darlington Transistors PNP 120V TRANS 1A 3K Gain 1W Bipolar Transistors - BJT PNP 120V TRANS 1A 3K Gain 1W
Product Category Darlington Transistors Bipolar Transistors - BJT
Manufacturer Diodes Diodes
RoHS Details No
Configuration Single Single
Transistor Polarity PNP PNP
Collector- Emitter Voltage VCEO Max 120 V 100 V
Emitter- Base Voltage VEBO 10 V 10 V
Collector- Base Voltage VCBO 140 V 120 V
Mounting Style Through Hole Through Hole
Package / Case TO-92 TO-92-3
Maximum Operating Temperature + 150 C + 150 C
DC Current Gain hFE Max 3000 3000 at 10 mA at 5 V
Height 4.01 mm 4.01 mm
Length 4.77 mm 4.77 mm
Minimum Operating Temperature - 55 C - 55 C
Width 2.41 mm 2.41 mm
Unit Weight 0.016000 oz 0.016000 oz
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