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BSH201215

Description
DC Power Connectors 2.5mm x 5.5mm horz
Categorysemiconductor    Discrete semiconductor   
File Size116KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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DC Power Connectors 2.5mm x 5.5mm horz

BSH201215 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 60 V
Id - Continuous Drain Current- 300 mA
Rds On - Drain-Source Resistance2.1 Ohms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingReel
PackagingMouseReel
PackagingCut Tape
Fall Time4.5 ns
Height1 mm
Length3 mm
Pd - Power Dissipation417 mW
ProductMOSFET Small Signal
Rise Time4.5 ns
Factory Pack Quantity3000
Transistor Type1 P-Channel
Typical Turn-Off Delay Time45 ns
Typical Turn-On Delay Time2 ns
Width1.4 mm
Unit Weight0.000282 oz
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
FEATURES
• Low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount
package
BSH201
SYMBOL
s
QUICK REFERENCE DATA
V
DS
= -60 V
I
D
= -0.3 A
R
DS(ON)
2.5
(V
GS
= -10 V)
d
g
GENERAL DESCRIPTION
P-channel, enhancement mode,
logic level, field-effect power
transistor. This device has low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
The BSH201 is supplied in the
SOT23
subminiature
surface
mounting package.
PINNING
PIN
1
2
3
gate
source
drain
DESCRIPTION
SOT23
3
Top view
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
R
GS
= 20 kΩ
T
a
= 25 ˚C
T
a
= 100 ˚C
T
a
= 25 ˚C
T
a
= 25 ˚C
T
a
= 100 ˚C
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
-60
-60
±
20
-0.3
-0.19
-1.2
0.417
0.17
150
UNIT
V
V
V
A
A
A
W
W
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-a
PARAMETER
Thermal resistance junction to
ambient
CONDITIONS
FR4 board, minimum
footprint
TYP.
300
MAX.
-
UNIT
K/W
August 1998
1
Rev 1.000
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