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2SC3325-YLF

Description
Diodes - General Purpose, Power, Switching Small Signal Diode
Categorysemiconductor    Discrete semiconductor   
File Size178KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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Diodes - General Purpose, Power, Switching Small Signal Diode

2SC3325-YLF Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerToshiba Semiconductor
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseTO-236-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage100 mV
Maximum DC Collector Current500 mA
Gain Bandwidth Product fT300 MHz
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min70 at 100 mA at 1 V
DC Current Gain hFE Max240 at 100 mA at 1 V
PackagingCut Tape
PackagingMouseReel
PackagingReel
Pd - Power Dissipation200 mW
Factory Pack Quantity3000
Unit Weight0.000423 oz
2SC3325
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC3325
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Excellent h
FE
linearity : h
FE (2)
= 25 (min) (V
CE
= 6 V, I
C
= 400 mA)
High voltage: V
CEO
= 50 V (min)
Complementary to 2SA1313
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
50
50
5
500
50
200
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1982-12
1
2014-03-01
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