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SI2306DS-T1

Description
MOSFET 30V 3.5A 1.25
CategoryDiscrete semiconductor    The transistor   
File Size65KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SI2306DS-T1 Overview

MOSFET 30V 3.5A 1.25

SI2306DS-T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSingle
Maximum drain current (Abs) (ID)3.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.25 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
Si2306DS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
3.5
2.8
r
DS(on)
(W)
0.057 @ V
GS
= 10 V
0.094 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
-
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
Si2306DS (A6)*
*Marking Code
Ordering Information: Si2306DS-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
3.5
2.8
16
1.25
1.25
0.80
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Notes
a. Surface Mounted on FR4 Board.
b. t
v
5 sec.
Document Number: 70827
S-31873—Rev. C, 15-Sep-03
www.vishay.com
t
v
5 sec
Steady State
Symbol
R
thJA
Typical
130
Maximum
100
Unit
_C/W
1

SI2306DS-T1 Related Products

SI2306DS-T1 SI2306DS-T1-E3
Description MOSFET 30V 3.5A 1.25 MOSFET 30V 3.5A 1.25
Is it Rohs certified? incompatible conform to
Maker Vishay Vishay
Reach Compliance Code unknown unknown
Is Samacsys N N
Configuration Single Single
Maximum drain current (Abs) (ID) 3.5 A 3.5 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 1.25 W 1.25 W
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn)
Base Number Matches 1 1
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