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BLF7G22L-160112

Description
RF MOSFET Transistors Power LDMOS transistor
Categorysemiconductor    Discrete semiconductor   
File Size2MB,18 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF7G22L-160112 Overview

RF MOSFET Transistors Power LDMOS transistor

BLF7G22L-160112 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current36 A
Vds - Drain-Source Breakdown Voltage65 V
TechnologySi
Gain18 dB
Output Power43 W
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-502A
PackagingTube
ConfigurationSingle
Operating Frequency2 GHz to 2.2 GHz
Factory Pack Quantity60
TypeRF Power MOSFET
Vgs - Gate-Source Voltage13 V
Vgs th - Gate-Source Threshold Voltage1.9 V
BLF7G22L-160;
BLF7G22LS-160
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
I
Dq
(mA)
1300
V
DS
(V)
28
P
L(AV)
(W)
43
G
p
(dB)
18.0
D
(%)
30
ACPR
(dBc)
32
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
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