EEWORLDEEWORLDEEWORLD

Part Number

Search

SI5904DC-T1-GE3

Description
MOSFET DUAL N-CH 2.5V (G-S)
CategoryDiscrete semiconductor    The transistor   
File Size108KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric Compare View All

SI5904DC-T1-GE3 Online Shopping

Suppliers Part Number Price MOQ In stock  
SI5904DC-T1-GE3 - - View Buy Now

SI5904DC-T1-GE3 Overview

MOSFET DUAL N-CH 2.5V (G-S)

SI5904DC-T1-GE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionSMALL OUTLINE, R-PDSO-C8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)3.1 A
Maximum drain current (ID)3.1 A
Maximum drain-source on-resistance0.075 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-C8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.1 W
Certification statusNot Qualified
surface mountYES
Terminal surfacePURE MATTE TIN
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Base Number Matches1
Si5904DC
Vishay Siliconix
Dual N-Channel 2.5 V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
R
DS(on)
(Ω)
0.075 at V
GS
= 4.5 V
0.134 at V
GS
= 2.5 V
I
D
(A)
± 4.2
± 3.1
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
1206-8 ChipFE
T
®
1
S
1
D
1
D
1
D
2
D
2
G
1
S
2
G
2
D
1
D
2
Marking Code
CB XX
Lot Traceability
and Date Code
Part # Code
S
1
S
2
N-Channel MOSFET
G
1
G
2
Bottom View
Ordering Information:
Si5904DC-T1-E3 (Lead (Pb)-free)
Si5904DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.8
2.1
1.1
- 55 to 150
260
± 4.2
± 3.0
± 10
0.9
1.1
0.6
W
°C
5s
20
± 12
± 3.1
± 2.2
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
t
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
50
90
30
Maximum
60
110
40
°C/W
Unit
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71065
S10-0548-Rev. D, 08-Mar-10
www.vishay.com
1

SI5904DC-T1-GE3 Related Products

SI5904DC-T1-GE3 SI5904DC-T1
Description MOSFET DUAL N-CH 2.5V (G-S) MOSFET 20V 4.2A 2.1W
Is it Rohs certified? conform to incompatible
Maker Vishay Vishay
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99
Is Samacsys N N
Maximum drain current (Abs) (ID) 3.1 A 3.1 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 2.1 W 2.1 W
Base Number Matches 1 1
Principle of infrared temperature sensor
[font=PMingLiU][size=10.5pt]Nowadays, people are very concerned about their health and hope to have a good body. Body temperature is one of the important physiological parameters of the human body, an...
liuyanliuyan Power technology
ARM9 thread conflict
Two threads written in arm9 receive data from the serial port and the network port respectively. The former runs all the time, and the latter runs every 1.5 seconds. Now when the latter runs, the form...
fanfangzhang ARM Technology
UC3843 power supply problem
I need help. I hope the experts who make switching power supplies can help me. Thank you. Please help me calculate the values of the capacitors of UC3843, such as C3, C4, C6, C11, C12! The ones I made...
gx202607 Power technology
High stability, high power pulse current stabilized power supply
Abstract: This paper introduces a pulse adjustable high stability current stabilized power supply used in the deflection magnet of HL-1M neutral beam injector (NBI). The scheme adopted is the joint co...
zbz0529 Power technology
What do the numbers in the first column of the results viewed with tcpDebugShow() mean?
As shown below, what do the numbers in the first column mean? -> tcpDebugShow 1665138688 user CLOSED 1665138688 user CLOSED 643760896 user CLOSED 643760896 input LISTEN 643760896 output SYN_RCVD 64376...
ldmark Embedded System
Why if I use two interrupts to control the time on a timer,
Why is it that when I use two interrupts to control the time on a timer, the interval between flashing of the running lights is the same when the temperature is above 27 and below 27, both with an int...
FENFAXIANGSHANG 51mcu

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 721  264  1233  1275  497  15  6  25  26  11 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号