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BUK7905-40ATE127

Description
MOSFET TRENCHPLUS MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size209KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK7905-40ATE127 Overview

MOSFET TRENCHPLUS MOSFET

BUK7905-40ATE127 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-5
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current155 A
Rds On - Drain-Source Resistance5 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Channel ModeEnhancement
PackagingTube
Fall Time110 ns
Height9.4 mm
Length10.3 mm
Pd - Power Dissipation272 W
Rise Time115 ns
Factory Pack Quantity1000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time155 ns
Typical Turn-On Delay Time35 ns
Width4.5 mm
Unit Weight0.105822 oz
BUK7905-40ATE
N-channel TrenchPLUS standard level FET
Rev. 02 — 10 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
temperature sensing and ElectroStatic Discharge (ESD) protection. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
Symbol
V
DS
R
DSon
Quick reference
Parameter
drain-source voltage
Conditions
T
j
25 °C; T
j
175 °C
Min
-
-
Typ
-
4.5
Max
40
5
Unit
V
mΩ
Static characteristics
drain-source on-state V
GS
= 10 V; I
D
= 50 A;
resistance
T
j
= 25 °C; see
Figure 7;
see
Figure 8
temperature sense
diode temperature
coefficient
temperature sense
diode forward
voltage
I
F
= 250 µA; T
j
-55 °C;
T
j
175 °C
I
F
= 250 µA; T
j
= 25 °C
S
F(TSD)
-1.4
-1.54
-1.68
mV/K
V
F(TSD)
648
658
668
mV
V
F(TSD)hys
temperature sense
diode forward
voltage hysteresis
I
F
250 µA; T
j
= 25 °C;
I
F
125 µA
25
32
50
mV
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