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BUK7635-100A118

Description
MOSFET TAPE13 PWR-MOS
Categorysemiconductor    Discrete semiconductor   
File Size174KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK7635-100A118 Overview

MOSFET TAPE13 PWR-MOS

BUK7635-100A118 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current41 A
Rds On - Drain-Source Resistance35 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Channel ModeEnhancement
PackagingReel
PackagingMouseReel
PackagingCut Tape
Fall Time35 ns
Height4.5 mm
Length10.3 mm
Pd - Power Dissipation149 W
Rise Time67 ns
Factory Pack Quantity800
Transistor Type1 N-Channel
Typical Turn-Off Delay Time56 ns
Typical Turn-On Delay Time15 ns
Width9.4 mm
D2
PA
K
BUK7635-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 18 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
100
41
149
V
A
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 25 A;
T
j
= 175 °C; see
Figure 12;
see
Figure 13
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 12;
see
Figure 13
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 25 A; V
sup
100 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 10 V;
avalanche energy T
j(init)
= 25 °C; unclamped
-
-
110
mJ
-
-
88
mΩ
-
21
35
mΩ
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