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BC856BDW1T3G

Description
MOSFET 100V 4.5a .62 Ohms/VGS=1V
CategoryDiscrete semiconductor    The transistor   
File Size81KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC856BDW1T3G Overview

MOSFET 100V 4.5a .62 Ohms/VGS=1V

BC856BDW1T3G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeSC-88
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Manufacturer packaging code419B-02
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage65 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)220
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.38 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC856BDW1T1G,
SBC856BDW1T1G Series,
BC857BDW1T1G,
SBC857BDW1T1G Series,
BC858CDW1T1G Series
Dual General Purpose
Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
(3)
SOT−363/SC−88
CASE 419B
STYLE 1
(2)
(1)
www.onsemi.com
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
BC856, SBC856
BC857, SBC857
BC858
Collector −Base Voltage
BC856, SBC856
BC857, SBC857
BC858
Emitter −Base Voltage
Collector Current −Continuous
Collector Current − Peak
Symbol
V
CEO
−65
−45
−30
V
CBO
−80
−50
−30
V
EBO
I
C
I
C
−5.0
−100
−200
V
mAdc
mAdc
M
G
V
3x
1
= Specific Device Code
x = B, F, G, or L
(See Ordering Information)
= Date Code
= Pb−Free Package
Value
Unit
V
6
3x MG
G
Q
1
Q
2
(4)
(5)
(6)
MARKING DIAGRAM
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR− 5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Range
Symbol
P
D
Max
380
250
3.0
R
qJA
T
J
, T
stg
328
−55 to +150
°C
Unit
mW
mW
mW/°C
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
August, 2016 − Rev. 10
Publication Order Number:
BC856BDW1T1/D
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