printers, battery charger, telecommunication power
system, and telephones power system.
Product Summary
V
DS
(V)
-30
r
DS(on)
(mΩ)
9@V
GS
=-10V
13@V
GS
=-4.5V
I
D
(A)
-15
-11
Pin Assignments
S
S
S
G
1
2
3
4
8
7
6
5
Pin Descriptions
D
D
D
D
Pin Name
S
G
D
Description
Source
Gate
Drain
SOP-8
Ordering information
A X
Feature
F :MOSFET
PN
4407P X X X
Package
S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Jul 16, 2004
1/5
AF4407P
P-Channel 30-V (D-S) MOSFET
Absolute Maximum Ratings
(T
A
=25ºC unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
T
A
=25ºC
T
A
=70ºC
Pulsed Drain Current
(Note 2)
Continuous Source Current (Diode Conduction)
(Note 1)
T
A
=25ºC
Power Dissipation
(Note 1)
T
A
=70ºC
Operating and Storage Junction Temperature Range
Rating
-30
±25
-15
-11
±50
-2.1
3.1
2.3
-55 to 150
Units
V
V
A
A
A
W
ºC
Thermal Resistance Ratings
Symbol
R
θJC
R
θJA
Parameter
Maximum Junction-to-Case
(Note 1)
Maximum Junction-to-Ambient
(Note 1)
t < = 5 sec
t < = 5 sec
Maximum
25
50
Units
ºC/W
ºC/W
Note 1:
surface Mounted on 1”x 1” FR4 Board.
Note 2:
Pulse width limited by maximum junction temperature
Specifications
(T
A
=25ºC unless otherwise noted)
Symbol
Static
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
Parameter
Drain-Source breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
(Note 3)
Drain-Source On-Resistance
(Note 3)
Test Conditions
V
GS
=0V, I
D
=-250uA
V
DS
= V
GS
, I
D
=-250uA
V
DS
=0V, V
GS
=±25V
V
DS
=-24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V,
T
J
=55ºC
V
GS
=-5V, V
DS
=-10V
V
GS
=-10V, I
D
=-13A
V
GS
=-4.5V, I
D
=-11A
V
GS
=-10V, I
D
=-13A,
T
J
=55ºC
V
GS
=-5V, I
D
=-13A
I
S
=2.1A, V
GS
=0V
V
DS
=-15V, V
GS
=-10V,
I
D
=-13A
Min.
-30
-1
-
-
-
-50
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Typ.
-
-1.6
-
-
-
-
7.3
10
9
44
-0.7
71
12
15
19
11
121
68
Max.
-
-3
±100
-1
-5
-
9
13
11
-
-1.2
100
-
-
36
21
186
112
S
V
Unit
V
V
nA
uA
A
mΩ
g
fs
Forward Tranconductance
(Note 3)
V
SD
Diode Forward Voltage
Dynamic
(Note 4)
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Switching
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall-Time
nC
V
DD
=-15V, R
L
=6Ω,
ID=-1A, VGEN=-10V
nS
Note 3:
Pulse test: PW
<
300us duty cycle
<
2%.
Note 4:
Guaranteed by design, not subject to production testing.
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