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BYG10JHM3-TR

Description
Rectifiers 1.5A,600V VGSC-STD Avalanche SMD
Categorysemiconductor    Discrete semiconductor   
File Size95KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BYG10JHM3-TR Overview

Rectifiers 1.5A,600V VGSC-STD Avalanche SMD

BYG10JHM3-TR Parametric

Parameter NameAttribute value
Product CategoryRectifiers
ManufacturerVishay
Package / CaseSMA
QualificationAEC-Q101
PackagingCut Tape
PackagingMouseReel
PackagingReel
ProductRectifiers
Factory Pack Quantity12600
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com
Vishay General Semiconductor
Standard Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Controlled avalanche characteristics
• Glass passivated pellet chip junction
Available
• Low reverse current
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMA
(DO-214AC)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
E
R
T
J
max.
Package
Diode variations
1.5 A
200 V, 400 V, 600 V, 800 V,
1000 V, 1600 V
30 A
1.0 μA
1.15 V
20 mJ
150 °C
SMA (DO-214AC)
Single
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case:
SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals:
matte tin plated leads, solderable per J-STD-002
and JESD 22-B102
E3, M3, HE3, HM3 suffix meet JESD 201 class 2 whisker test
Note
• BYG10Y for commercial grade only
Polarity:
color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I
(BR)R
= 1 A, T
J
= 25 °C (for BYG10D thru BYG10M)
I
(BR)R
= 0.4 A, T
J
= 25 °C (for BYG10Y)
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
SYMBOL
BYG10D
BYG10D
200
BYG10G
BYG10G
400
BYG10J
BYG10J
600
1.5
30
BYG10K
BYG10K
800
BYG10M
BYG10M
1000
BYG10Y
BYG10Y
1600
V
A
A
UNIT
E
R
T
J
, T
STG
20
-55 to +150
mJ
°C
Revision: 17-Aug-17
Document Number: 88957
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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