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BU426A-S

Description
Bipolar Transistors - BJT 900V 6A NPN
Categorysemiconductor    Discrete semiconductor   
File Size81KB,5 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
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Bipolar Transistors - BJT 900V 6A NPN

BU426A-S Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerBourns
RoHSDetails
Transistor PolarityNPN
PackagingCut Tape
PackagingReel
Factory Pack Quantity10000
BU426, BU426A
NPN SILICON POWER TRANSISTORS
Rugged Triple-Diffused Planar Construction
900 Volt Blocking Capability
B
SOT-93 PACKAGE
(TOP VIEW)
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 50°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for t
p
2 ms, duty cycle
2%.
BU426
BU426A
BU426
BU426A
BU426
BU426A
SYMBOL
V
CBO
V
CES
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
VALUE
800
900
800
900
375
400
6
10
+2, -0.1
±3
70
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
W
°C
°C
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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