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BUK7K52-60EX

Description
MOSFET Dual N-channel 60V Mosfet
Categorysemiconductor    Discrete semiconductor   
File Size4MB,60 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK7K52-60EX Overview

MOSFET Dual N-channel 60V Mosfet

BUK7K52-60EX Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseLFPAK33-5
Number of Channels2 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current15.4 A
Rds On - Drain-Source Resistance45 mOhms
Vgs th - Gate-Source Threshold Voltage3 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge9.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationDual
Channel ModeEnhancement
PackagingReel
Fall Time5.4 ns
Pd - Power Dissipation32 W
Rise Time5.1 ns
Factory Pack Quantity1500
Transistor Type2 N-Channel
Typical Turn-Off Delay Time8.4 ns
Typical Turn-On Delay Time4.3 ns
Power MOSFET
Selection Guide 2013
Smaller, faster, cooler

BUK7K52-60EX Related Products

BUK7K52-60EX BUK9K12-60EX BUK9K6R8-40EX
Description MOSFET Dual N-channel 60V Mosfet Development Boards u0026 Kits - ARM LPCXpresso Board for LPC11C24 Board Mount Humidity Sensors
Product Category MOSFET MOSFET MOSFET
Manufacturer NXP NXP NXP
RoHS Details Details Details
Technology Si Si Si
Mounting Style SMD/SMT SMD/SMT SMD/SMT
Package / Case LFPAK33-5 LFPAK56D-8 LFPAK56D-8
Number of Channels 2 Channel 2 Channel 2 Channel
Transistor Polarity N-Channel N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 60 V 60 V, 60 V 40 V, 40 V
Id - Continuous Drain Current 15.4 A 35 A, 35 A 40 A, 40 A
Rds On - Drain-Source Resistance 45 mOhms 9.5 mOhms, 9.5 mOhms 5 mOhms, 5 mOhms
Vgs th - Gate-Source Threshold Voltage 3 V 1.4 V, 1.4 V 1.4 V, 1.4 V
Vgs - Gate-Source Voltage 20 V 10 V, 10 V 10 V, 10 V
Qg - Gate Charge 9.2 nC 24.5 nC, 24.5 nC 22.2 nC, 22.2 nC
Minimum Operating Temperature - 55 C - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C + 175 C
Configuration Dual Dual Dual
Channel Mode Enhancement Enhancement Enhancement
Fall Time 5.4 ns 25.3 ns, 25.3 ns 20 ns, 20 ns
Pd - Power Dissipation 32 W 68 W 64 W
Rise Time 5.1 ns 28 ns, 28 ns 22 ns, 22 ns
Factory Pack Quantity 1500 1500 1500
Transistor Type 2 N-Channel 2 N-Channel 2 N-Channel
Typical Turn-Off Delay Time 8.4 ns 31.5 ns, 31.5 ns 27 ns, 27 ns
Typical Turn-On Delay Time 4.3 ns 15.1 ns, 15.1 ns 13 ns, 13 ns
Packaging Reel Reel Reel
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