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BSZ180P03NS3-G

Description
RF System on a Chip - SoC BLE 4.2 Wearables SoC AQFN60 8Mb Flash
Categorysemiconductor    Discrete semiconductor   
File Size630KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSZ180P03NS3-G Overview

RF System on a Chip - SoC BLE 4.2 Wearables SoC AQFN60 8Mb Flash

BSZ180P03NS3-G Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSDSON-8
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 30 V
Id - Continuous Drain Current- 39.6 A
Rds On - Drain-Source Resistance13.5 mOhms
Vgs th - Gate-Source Threshold Voltage- 3.1 V
Vgs - Gate-Source Voltage25 V
Qg - Gate Charge30 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
PackagingMouseReel
Fall Time3 ns
Forward Transconductance - Min18 S
Height1.1 mm
Length3.3 mm
Pd - Power Dissipation40 W
Rise Time11 ns
Factory Pack Quantity5000
Transistor Type1 P-Channel
Typical Turn-Off Delay Time20 ns
Typical Turn-On Delay Time11 ns
Width3.3 mm
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BSZ180P03NS3-G Related Products

BSZ180P03NS3-G BSZ180P03NS3GATMA1
Description RF System on a Chip - SoC BLE 4.2 Wearables SoC AQFN60 8Mb Flash MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
Configuration Single SINGLE WITH BUILT-IN DIODE

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