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BLF6G38-10G112

Description
RF MOSFET Transistors LDMOS TNS
Categorysemiconductor    Discrete semiconductor   
File Size1MB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF6G38-10G112 Overview

RF MOSFET Transistors LDMOS TNS

BLF6G38-10G112 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current3.1 A
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance1.256 Ohms
TechnologySi
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-502A-3
PackagingTube
Channel ModeEnhancement
ConfigurationSingle
Height3.63 mm
Length10.29 mm
Factory Pack Quantity180
TypeRF Power MOSFET
Vgs - Gate-Source Voltage13 V
Width6.93 mm
BLF6G38-10; BLF6G38-10G
WiMAX power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
C in a class-AB production test circuit.
Mode of operation
1-carrier N-CDMA
[1]
[1]
[2]
f
(MHz)
3400 to 3600
V
DS
(V)
28
P
L(AV)
(W)
2
G
p
(dB)
14
D
(%)
20
ACPR
885k
(dBc)
49
[2]
ACPR
1980k
(dBc)
64
[2]
Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling. You must use a ground strap or touch the PC case or other
grounded source before unpacking or handling the hardware.
1.2 Features and benefits
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an I
Dq
of 130 mA:
Qualified up to a maximum V
DS
operation of 32 V
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation
Internally matched for ease of use
Low gold plating thickness on leads
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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