BLF884P; BLF884PS
UHF power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1.
Application information
RF performance at V
DS
= 50 V unless otherwise specified.
Mode of operation
f
(MHz)
2-tone, class-AB
DVB-T (8k OFDM)
DVB-T (8k OFDM)
[1]
[2]
P
L(AV)
P
L(M)
G
p
(W)
150
70
70
(W)
-
-
-
D
IMD3
IMD
shldr
(dBc)
-
31
[1]
32
[1]
PAR
(dB)
-
8.2
[2]
8.0
[2]
(dB) (%) (dBc)
21
21
20
46
33
32
32
-
-
RF performance in a common source 860 MHz narrowband test circuit
f
1
= 860; f
2
= 860.1
858
858
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
Optimum thermal behavior and reliability, R
th(j-c)
= 0.22 K/W
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
BLF884P; BLF884PS
UHF power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF884P (SOT1121A)
1
2
1
3
5
3
4
2
sym117
5
4
BLF884PS (SOT1121B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF884P
BLF884PS
-
-
Description
flanged LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged LDMOST ceramic package;
4 leads
Version
SOT1121A
SOT1121B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
104
+11
+150
200
Unit
V
V
C
C
BLF884P_BLF884PS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 15
BLF884P; BLF884PS
UHF power LDMOS transistor
5. Thermal characteristics
Table 5.
R
th(j-c)
[1]
Thermal characteristics
Conditions
[1]
Symbol Parameter
Typ
Unit
thermal resistance from junction to case T
case
= 80
C;
P
L(AV)
= 70 W
0.22 K/W
R
th(j-c)
is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
R
DS(on)
C
iss
C
oss
C
rss
[1]
[2]
Conditions
V
GS
= 0 V; I
D
= 1.2 mA
V
DS
= 10 V; I
D
= 120 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 10 V; V
DS
= 0 V
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 4.25 A
V
GS
= 0 V; V
DS
= 50 V;
f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V;
f = 1 MHz
V
GS
= 0 V; V
DS
= 50 V;
f = 1 MHz
[1]
[1]
[1]
Min Typ
104 -
1.4
-
-
-
-
-
-
-
1.9
-
19
-
240
105
34
0.7
Max Unit
-
2.4
1.4
-
140
-
-
-
-
V
V
A
A
nA
m
pF
pF
pF
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
[2]
I
D
is the drain current.
Capacitance values without internal matching.
Table 7.
RF characteristics
RF characteristics in Ampleon production narrowband test circuit; T
case
= 25
C unless otherwise
specified.
Symbol
V
DS
I
Dq
P
L(AV)
G
p
D
IMD3
Parameter
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
third-order intermodulation distortion
f
1
= 860 MHz;
f
2
= 860.1 MHz
f
1
= 860 MHz;
f
2
= 860.1 MHz
f
1
= 860 MHz;
f
2
= 860.1 MHz
f
1
= 860 MHz;
f
2
= 860.1 MHz
[1]
Conditions
Min Typ Max Unit
-
-
50
-
-
-
-
V
A
W
dB
%
dBc
2-Tone, class-AB
0.65 -
150 -
20
42
-
21
46
32 28
BLF884P_BLF884PS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 15
BLF884P; BLF884PS
UHF power LDMOS transistor
Table 7.
RF characteristics
…continued
RF characteristics in Ampleon production narrowband test circuit; T
case
= 25
C unless otherwise
specified.
Symbol
V
DS
I
Dq
P
L(AV)
G
p
D
IMD
shldr
PAR
[1]
[2]
[3]
Parameter
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
Conditions
Min Typ Max Unit
-
[1]
DVB-T (8k OFDM), class-AB
50
-
21
33
8.2
-
-
-
-
-
V
A
W
dB
%
dBc
dB
-
70
20
30
[2]
[3]
0.65 -
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
-
-
31 27
I
dq
for total device
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
200
C
oss
(pF)
150
001aao028
100
50
0
0
20
40
V
DS
(V)
60
V
GS
= 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values per
section
6.1 Ruggedness in class-AB operation
The BLF884P and BLF884PS are capable of withstanding a load mismatch corresponding
to VSWR of
40 : 1 through all phases under the following conditions: V
DS
= 50 V;
f = 860 MHz at rated power.
BLF884P_BLF884PS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 15
BLF884P; BLF884PS
UHF power LDMOS transistor
7. Application information
7.1 Broadband RF figures
7.1.1 DVB-T
001aao029
001aao030
24
G
p
(dB)
20
G
p
-10
IMD
shldr
(dBc)
-20
9.5
PAR
(dB)
8.5
PAR
50
η
D
(%)
40
16
IMD
shldr
-30
7.5
η
D
30
12
-40
6.5
20
8
400
500
600
700
-50
800
900
f (MHz)
5.5
400
500
600
700
10
800
900
f (MHz)
P
L(AV)
= 70 W; V
DS
= 50 V; I
Dq
= 0.65 A; measured in a
common source broadband test circuit as described in
Section 8.
P
L(AV)
= 70 W; V
DS
= 50 V; I
Dq
= 0.65 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 2.
DVB-T power gain and intermodulation
distortion shoulder as function of frequency;
typical values
Fig 3.
DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
BLF884P_BLF884PS#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 15
京公网安备 11010802033920号
EEWORLD
