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ZTX1048ASTOB

Description
Bipolar Transistors - BJT NPN High Gain u0026 Crnt
Categorysemiconductor    Discrete semiconductor   
File Size120KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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Bipolar Transistors - BJT NPN High Gain u0026 Crnt

ZTX1048ASTOB Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-92-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max17.5 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current4 A
Gain Bandwidth Product fT150 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current4 A
DC Current Gain hFE Max280 at 10 mA at 2 V
Height4.01 mm
Length4.77 mm
Minimum Operating Temperature- 55 C
PackagingBulk
Pd - Power Dissipation1 W
Factory Pack Quantity4000
Width2.41 mm
Unit Weight0.016000 oz
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 – FEBRUARY 1995
FEATURES
* V
CEV
=50V
* Very Low Saturation Voltages
* High Gain
* 20 Amps pulse current
APPLICATIONS
* LCD Backlight Convertors
* Emergency Lighting
* DC-DC Convertors
ZTX1048A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
ZTX1048A
50
17.5
5
20
4
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C

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