1N5610 thru 1N5613
Voidless Hermetically Sealed Unidirectional
Transient Voltage Suppressors
Qualified per MIL-PRF-19500/434
DESCRIPTION
This series of industry recognized voidless hermetically sealed unidirectional Transient
Voltage Suppressor (TVS) designs is military qualified and are ideal for high-reliability
applications where a failure cannot be tolerated. They provide a Working Peak “Standoff”
Voltage selection from 30.5 to 175 volts with 1500 watt ratings. They are very robust in hard-
glass construction and also use an internal metallurgical bond identified as
“Category 1”
for
high reliability applications. These devices are also available in a surface mount MELF
package configuration as a special order. Microsemi also offers numerous other TVS
products to meet higher and lower peak pulse power and voltage ratings in both through-hole
and surface-mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX, and
JANTXV
FEATURES
•
•
•
•
•
•
•
High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
Triple-layer passivation.
Internal
“Category 1”
metallurgical bonds.
Voidless hermetically sealed glass package.
JAN, JANTX, and JANTXV military qualifications available per MIL-PRF-19500/434.
Further options for screening in accordance with MIL-PRF-19500 for JANS equivalent level by
using a “SP” prefix.
RoHS compliant versions available (commercial grade only).
“G” Package
Also available by
Special order:
MELF Surface Mount
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
•
•
Military and other high reliability transient protection.
Extremely robust construction.
Working Peak “Standoff” Voltage (V
WM
) from 30.5 to 175 V.
Available as 1500 watt Peak Pulse Power (P
PP
).
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
Secondary lightning protection per select levels in IEC61000-4-5.
Flexible axial-leaded mounting terminals.
Non-sensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
@ T
A
= 25
o
C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Peak Pulse Power @ t
p
= 1.0 ms
Rated Forward Surge Current @ t
p
= 8.33 ms
Impulse repetition rate (duty factor)
(1)
Steady-State Power
(Figure
4)
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
P
PP
I
FSM
I
PP
P
D
T
SP
Value
-55 to +175
1500
150
0.01
3.0
260
Unit
C
W
A (pk)
%
W
o
C
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. Derate at 20 mW/
o
C above T
A
= +25
o
C
.
Steady-state power ratings with reference to ambient are for PC
boards where thermal resistance from mounting point to ambient is sufficiently controlled where T
J(MAX)
is not exceeded.
T4-LDS-0241, Rev. 1 (112023)
©2011 Microsemi Corporation
Page 1 of 4
1N5610 thru 1N5613
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Hermetically sealed voidless hard glass with tungsten slugs.
TERMINATIONS: Axial-leads are tin/lead (Sn/Pb) over copper. RoHS compliant matte-tin available for commercial only.
MARKING: Body painted and part number.
POLARITY: Cathode band.
Tape & Reel option: Standard per EIA-296. Consult factory for quantities.
Weight: 1270 milligrams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
SP = Reference JANS
Blank = Commercial
1N5610
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
See
Electrical Characteristics
table
Symbol
I
(BR)
I
D
I
PP
P
PP
T
SP
α
V(BR)
SYMBOLS & DEFINITIONS
Definition
Breakdown Current: The current used for measuring Breakdown Voltage V
(BR)
.
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
Peak Pulse Current: The peak current during the impulse.
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I
PP
.
Temperature Solder Pad: The maximum solder temperature that can be safely applied to the terminal.
Temperature Coefficient of Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified
current temperature.
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Maximum clamping voltage at specified I
PP
(Peak Pulse Current) at the specified pulse conditions.
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. This is
also referred to as Standoff Voltage.
V
(BR)
V
C
V
WM
ELECTRICAL CHARACTERISTICS
MINIMUM
BREAK
DOWN
VOLTAGE
V
(BR)
@ 1.0 mA
Volts
33.0
43.7
54.0
191
BREAKDOWN
CURRENT
MAXIMUM dc
CURRENT
o
T
A
= +25 C
I
(BR)
mA
75.0
53.0
43.0
12.5
WORKING
PEAK
REVERSE
VOLTAGE
V
WM
V (pk)
30.5
40.3
49.0
175
MAX
STANDOFF
CURRENT
I
D
@ V
WM
µA
5
5
5
5
MAXIMUM
CLAMPING
VOLTAGE
V
C
@ 10/1000 µs
V (pk)
47.6
63.5
78.5
265
MAXIMUM
PEAK PULSE
CURRENT
I
PP
@8/20 µs
@10/1000 µs
A (pk)
193
136
116
33
A (pk)
32.0
24.0
19.0
5.7
MAXIMUM
TEMP.
COEF.
OF V
(BR)
α
V(BR)
%/ C
.093
.094
.096
.100
o
TYPE
1N5610
1N5611
1N5612
1N5613
T4-LDS-0241, Rev. 1 (112023)
©2011 Microsemi Corporation
Page 2 of 4
1N5610 thru 1N5613
GRAPHS
Peak Pulse Power P
PP
in kW
Pulse current (I
P
) in percent of I
PP
Peak Value
I
PP
Pulse time duration (tp) is
defined as that point where
I
P
decays to 50% of peak
value (I
PP
).
Pulse Time (tp)
FIG. 1 –
Non-repetitive peak pulse power rating curve
NOTE: Peak power defined as peak voltage times peak current.
Time (t) in microseconds
FIG. 2
Pulse wave form for exponential
surge for 10/1000 µs
I
PP
– Peak Pulse Current - % I
PP
T – Time –
µs
FIGURE 3
Peak Pulse Power (Ppp), Current (Ipp),
and DC Power in Percent of 25
o
C Rating
T – Temperature –
o
C
FIGURE 4
DERATING CURVE
8/20 µs CURRENT IMPULSE WAVEFORM
TEST WAVEFORM PARAMETERS:
t
r
= 8µsec
t
p
= 20µsec
T4-LDS-0241, Rev. 1 (112023)
©2011 Microsemi Corporation
Page 3 of 4
1N5610 thru 1N5613
PACKAGE DIMENSIONS
Ltr
BD
BL
LD
LL
LU
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.150
.185
3.81
4.70
.160
.375
4.06
9.53
.037
.042
0.94
1.07
.900
1.300 22.86 33.02
.050
1.27
Notes
3
3
4
Schematic Symbol
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Package contour optional within BD and length BL.
4. W ithin this zone lead diameter may vary to allow for lead finishes and irregularities other than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
T4-LDS-0241, Rev. 1 (112023)
©2011 Microsemi Corporation
Page 4 of 4
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