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HBF4522D

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size33KB,3 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
Download Datasheet View All

HBF4522D Overview

Transistor

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 1/3
HBF4522D
NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
Description
HBF4522D is designed for use in the monitor dynamic focus circuit. It
can be used up to 19" monitor with working frequency as high as
100KHz.
TO-126ML
Features
High Breakdown Voltage
Low C-E Saturation Voltage
High Cutoff Frequency
High Current Gain
Absolute Maximum Ratings
(Ta=25°C)
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 1.5 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 550 V
BVCEO Collector to Emitter Voltage.................................................................................. 550 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current ................................................................................................................ 20 mA
Electrical Characteristics
(Ta=25°C)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Min.
550
550
7
-
-
-
100
90
Typ.
-
-
-
-
-
0.35
150
-
Max.
-
-
-
1
100
0.5
200
-
Unit
V
V
V
uA
nA
V
MHz
Test Conditions
IC=1mA
IC=100uA
IE=10uA,
VCB=500V
VEB=5V
IC=30mA, IB=3mA
VCE=20V, IC=30mA
VCE=10V, IE=30mA, ftest=100MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HBF4522D
HSMC Product Specification
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