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30BQ200

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, Silicon, SMC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size287KB,4 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Download Datasheet Parametric Compare View All

30BQ200 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, Silicon, SMC, 2 PIN

30BQ200 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionR-PDSO-C2
Reach Compliance Codecompliant
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current55 A
Number of components1
Phase1
Number of terminals2
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
30BQ200
Technical Data
Data Sheet N0026, Rev. A
30BQ200 SCHOTTKY RECTIFIER
Features
Small foot print, surface moutable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
SMC
Circuit Diagram
Applications
Disk Drives
Switching power supply
Redundant power subsystems
Converters
Free-Wheeling diodes
Reverse battery protection
Battery Charging
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @T
L
=148°C,
rectangular wave form
50% duty cycle @T
L
=138°C,
rectangular wave form
8.3 ms, half Sine pulse, T
C
=25°C
Max.
200
3.0
4.0
55
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current*
Junction Capacitance
Series Inductance
* Pulse width < 300 µs, duty cycle < 2%
Symbol
V
F1
V
F2
I
R1
I
R2
C
T
L
S
dv/dt
Voltage Rate of Change
Condition
@ 3 A, Pulse, T
J
= 25 °C
@ 3 A, Pulse, T
J
= 75 °C
@V
R
= Rated V
R
, Pulse, T
J
= 25 °C
@V
R
= Rated V
R
, Pulse, T
J
= 100 °C
@V
R
= 5V, T
C
= 25 °C
f
SIG
= 1MHz
Measured lead to lead 5 mm from
package body
-
Typ.
0.83
-
0.00003
0.006
50
3.0
-
Max.
0.92
0.76
1
3
60
-
10,000
Units
V
V
mA
mA
pF
nH
V/s
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

30BQ200 Related Products

30BQ200
Description Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, Silicon, SMC, 2 PIN
Is it Rohs certified? incompatible
Maker Sangdest Microelectronics (Nanjing) Co., Ltd.
package instruction R-PDSO-C2
Reach Compliance Code compliant
Other features FREE WHEELING DIODE, HIGH RELIABILITY
application GENERAL PURPOSE
Configuration SINGLE
Diode component materials SILICON
Diode type RECTIFIER DIODE
JESD-30 code R-PDSO-C2
Maximum non-repetitive peak forward current 55 A
Number of components 1
Phase 1
Number of terminals 2
Maximum output current 4 A
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Certification status Not Qualified
surface mount YES
technology SCHOTTKY
Terminal form C BEND
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
Base Number Matches 1
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