BAV70-B0RF datasheet, PDF - EEWORLD Datasheet

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BAV70-B0RF: DescriptionRectifier Diode, 2 Element, 0.2A, 70V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size116KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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BAV70-B0RF Overview

Rectifier Diode, 2 Element, 0.2A, 70V V(RRM), Silicon,

BAV70-B0RF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.225 W
Maximum repetitive peak reverse voltage	70 V
Maximum reverse recovery time	0.006 µs
surface mount	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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BAW56, BAV70, BAV99

Taiwan Semiconductor

Small Signal Product

225mW SMD Switching Diode

FEATURES

- Fast switching speed

- Surface mount device type

- Moisture sensitivity level 1

- Matte Tin(Sn) lead finish with Nickel(Ni) underplate

- Pb free and RoHS compliant

- Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

MECHANICAL DATA

- Case: SOT-23 small outline plastic package

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260

C/10s

- Weight: 0.008grams (approximately)

SOT-23

MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS

=25℃ unless otherwise noted)

PARAMETER

Power dissipation

Peak repetitive reverse voltage

Repetitive peak forward current

Mean forward current

Non-repetitive peak forward

surge current

Thermal resistance form junction to ambient

Junction and storage temperature range

PARAMETER

Reverse breakdown voltage

Forward voltage

Reverse leakage current

Junction capacitance

Reverse revovery time

= 0 V,

f = 1 MHz

= 100

µA

= 50 mA

= 150 mA

= 70 V

BAW56, BAV70

BAV99

Pulse Width=1 sec

Pulse Width=1

µsec

SYMBOL

RRM

FRM

FSM

θJA

, T

STG

SYMBOL

(BR)

MIN

VALUE

225

450

200

0.5

556

- 55 to + 150

MAX

1.00

1.25

2.50

1.5

UNIT

C/W

UNIT

µA

= I

= 10 mA, R

= 100

Ω,

= 1 mA

Document Number: DS_S1404011

Version: H14

BAV70-B0RF Related Products

	BAV70-B0RF	BAV70-D0RF	BAV70-D0RFG	BAW56 RFG	BAV70 RFG
Description	Rectifier Diode, 2 Element, 0.2A, 70V V(RRM), Silicon,	Rectifier Diode, 2 Element, 0.2A, 70V V(RRM), Silicon,	Rectifier Diode, 2 Element, 0.2A, 70V V(RRM), Silicon,	DIODE ARRAY GP 70V 200MA SOT23	DIODE ARRAY GP 70V 200MA SOT23
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	standard	standard
Is it Rohs certified?	conform to	conform to	conform to	-	-
Maker	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	-	-
Reach Compliance Code	compliant	compliant	compliant	-	-
ECCN code	EAR99	EAR99	EAR99	-	-
Configuration	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	-	-
Diode component materials	SILICON	SILICON	SILICON	-	-
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	-	-
JESD-609 code	e3	e3	e3	-	-
Humidity sensitivity level	1	1	1	-	-
Number of components	2	2	2	-	-
Number of terminals	3	3	3	-	-
Maximum operating temperature	150 °C	150 °C	150 °C	-	-
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-	-
Maximum output current	0.2 A	0.2 A	0.2 A	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
Maximum power dissipation	0.225 W	0.225 W	0.225 W	-	-
Maximum repetitive peak reverse voltage	70 V	70 V	70 V	-	-
Maximum reverse recovery time	0.006 µs	0.006 µs	0.006 µs	-	-
surface mount	YES	YES	YES	-	-
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier	Matte Tin (Sn) - with Nickel (Ni) barrier	Matte Tin (Sn) - with Nickel (Ni) barrier	-	-
Terminal form	GULL WING	GULL WING	GULL WING	-	-
Terminal location	DUAL	DUAL	DUAL	-	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
Base Number Matches	1	1	1	-	-

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