5962-3829415MXA datasheet, PDF

5962-3829415MXA: DescriptionStandard SRAM, 8KX8, 25ns, CMOS, CDIP28, CERAMIC, DIP-28; Categorystorage storage; File Size259KB，9 Pages; ManufacturerCypress Semiconductor

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Standard SRAM, 8KX8, 25ns, CMOS, CDIP28, CERAMIC, DIP-28

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Cypress Semiconductor
Parts packaging code	DIP
package instruction	CERAMIC, DIP-28
Contacts	28
Reach Compliance Code	not_compliant
ECCN code	3A001.A.2.C
Maximum access time	25 ns
I/O type	COMMON
JESD-30 code	R-GDIP-T28
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	8KX8
Output characteristics	3-STATE
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883
Maximum standby current	0.02 A
Minimum standby current	4.5 V
Maximum slew rate	0.135 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb) - hot dipped
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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