EEWORLDEEWORLDEEWORLD

Part Number

Search

FZ1200R17KF6C-B2

Description
IGBT Modules 1700V 1200A SINGLE
Categorysemiconductor    Discrete semiconductor   
File Size362KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

FZ1200R17KF6C-B2 Online Shopping

Suppliers Part Number Price MOQ In stock  
FZ1200R17KF6C-B2 - - View Buy Now

FZ1200R17KF6C-B2 Overview

IGBT Modules 1700V 1200A SINGLE

FZ1200R17KF6C-B2 Parametric

Parameter NameAttribute value
Product CategoryIGBT Modules
ManufacturerInfineon
RoHSNo
ProductIGBT Silicon Modules
ConfigurationDual Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max1700 V
Collector-Emitter Saturation Voltage2.6 V
Continuous Collector Current at 25 C1950 A
Gate-Emitter Leakage Current400 nA
Pd - Power Dissipation9.6 kW
Package / CaseIHM
Maximum Operating Temperature+ 125 C
Height38 mm
Length140 mm
Maximum Gate Emitter Voltage20 V
Minimum Operating Temperature- 40 C
Mounting StyleScrew
Factory Pack Quantity2
Width130 mm
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FZ1200R17KF6C_B2
VorläufigeDaten
PreliminaryData

1700
1700
1200
1950
2400
9,60
+/- 20
min.
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
t
d on
4,5







typ.
2,60
3,10
5,5
14,5
0,81
79,0
4,00


0,30
0,30
0,16
0,16
1,10
1,10
0,13
0,14
max.
3,10
3,60
6,5




5,0
400

V
V
V
µC
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ

V

A
A
1700VIGBTModulmitlowlossIGBTder2.tenGenerationundsofterEmitterControlledDiode
1700VIGBTModulewithlowlossIGBTof2ndgenerationandsoftEmitterControlledDiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
vj
= 125°C
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150°C

V
CES
I
C nom

I
C
I
CRM
P
tot
V
GES




A

kW

V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
I
C
= 1200 A, V
GE
= 15 V
I
C
= 1200 A, V
GE
= 15 V
I
C
= 80,0 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1700 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 1200 A, V
CE
= 900 V
V
GE
= ±15 V
R
Gon
= 1,2
I
C
= 1200 A, V
CE
= 900 V
V
GE
= ±15 V
R
Gon
= 1,2
I
C
= 1200 A, V
CE
= 900 V
V
GE
= ±15 V
R
Goff
= 1,2
I
C
= 1200 A, V
CE
= 900 V
V
GE
= ±15 V
R
Goff
= 1,2
I
C
= 1200 A, V
CE
= 900 V, L
S
= 50 nH
V
GE
= ±15 V
R
Gon
= 1,2
I
C
= 1200 A, V
CE
= 900 V, L
S
= 50 nH
V
GE
= ±15 V
R
Goff
= 1,2
V
GE
15 V, V
CC
= 1000 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT
t
r


t
d off


t
f


E
on

330

E
off
I
SC
R
thJC
R
thCH
T
vj op




-40
480


t
P
10 µs, T
vj
= 125°C
4800

12,0

A
13,0 K/kW
K/kW
125
°C
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

preparedby:WB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.1
1
New Method for RF Parameter Testing
Keithley has successfully applied the design method introduced above to its latest S600DC/RF APT system for process monitoring. Its key performance indicators include: Based on Keithley S600 APT DC te...
songbo RF/Wirelessly
Design experience of benq Taiwan organization engineers (Part 2)
The mobile phones that hw is responsible for can be dropped directly to the ground, but the projectors that chris is responsible for are expensive, so the drop test method must be used to avoid the hi...
songbo RF/Wirelessly
How will 3D integrated circuits be realized simultaneously? (Repost)
How will 3D integrated circuits be realized simultaneously? Author: Philip Garrou Microelectronic Consultants of North Carolina Research Triangle Park, NC 2009-03-03 Hits: 1660 The first commercial ap...
jyl PCB Design
RS48 parallel garbled code problem
[i=s] This post was last edited by kkkwgwk0083 on 2018-7-26 17:58 [/i] @chunyang, moderator, please help me, I will be grateful. Problem description. There are two RS485 communication boards, and the ...
kkkwgwk0083 Test/Measurement
[Help Post] High-frequency oscillation of high-frequency switching power supply current
A 100W wireless power transmission prototype was made before. The primary resonant side adopted full-bridge switch phase shift control. The schematic diagram is shown in the figure.The actual measured...
shzhbchina Power technology
Pre-registration for the live broadcast with prizes: TI's latest application of millimeter-wave radar in the automotive field
Register for live broadcast Live broadcast time Tuesday, May 25, 10:00-11:30 a.m. Live Topic TI's latest applications of millimeter-wave radar in the automotive field Live content Introduces the lates...
EEWORLD社区 Automotive Electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1849  1200  660  224  30  38  25  14  5  1 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号