IPD068N10N3 G
OptiMOS
3 Power-Transistor
®
Product Summary
V
DS
R
DS(on),max
I
D
100
6.8
90
V
mW
A
Features
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPD068N10N3 G
Package
Marking
PG-TO252-3
068N10N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
2)
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
90
72
360
130
±20
Unit
A
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=90 A,
R
GS
=25
W
mJ
V
W
°C
T
C
=25 °C
150
-55 ... 175
55/175/56
J-STD20 and JESD22
See figure 3
Rev. 2.2
page 1
2014-05-19
IPD068N10N3 G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R
thJC
R
thJA
minimal footprint
6 cm
2
cooling area
3)
-
-
-
-
-
-
1
62
40
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=90 µA
V
DS
=100 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=100 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=90 A
V
GS
=6 V,
I
D
=45 A
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=90 A
100
2
-
-
2.7
0.1
-
3.5
1
µA
V
-
-
-
-
-
54
10
1
5.7
7.1
1.6
107
100
100
6.8
12.3
-
-
W
S
nA
mW
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2014-05-19
IPD068N10N3 G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
6)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
6)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50 V,
V
GS
=10 V,
I
D
=80 A,
R
G,ext
=3.6
W
V
GS
=0 V,
V
DS
=50 V,
f
=1 MHz
-
-
-
-
-
-
-
3690
646
25
19
37
37
9
4910
-
-
-
-
-
-
pF
ns
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=50 V,
V
GS
=0 V
V
DD
=50 V,
I
D
=90 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
18
10
17
51
4.9
68
-
-
-
68
-
91
nC
V
nC
I
S
I
S,pulse
V
SD
t
rr
Q
rr
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=90 A,
T
j
=25 °C
V
R
=15 V,
I
F
=80
A
,
di
F
/dt =100 A/µs
-
-
-
-
-
1
73
139
90
360
1.2
-
-
A
V
ns
nC
See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2014-05-19
IPD068N10N3 G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10 V
175
100
150
80
125
60
P
tot
[W]
100
75
I
D
[A]
40
50
20
25
0
0
50
100
150
200
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
1 µs
10 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
10
2
100 µs
10
0
1 ms
Z
thJC
[K/W]
0.5
I
D
[A]
0.2
0.1
10
1
10 ms
10
-1
0.05
0.02
0.01
DC
single pulse
10
0
10
-1
10
0
10
1
10
2
10
3
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.2
page 4
2014-05-19
IPD068N10N3 G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
400
10 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
18
15
320
7.5 V
4.5 V
5V
12
240
I
D
[A]
6V
R
DS(on)
[mW]
9
6V
7.5 V
160
5.5 V
6
10 V
80
5V
3
4.5 V
0
0
0
0
1
2
3
4
5
0
50
100
150
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
150
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
160
120
100
g
fs
[S]
50
25 °C
175 °C
I
D
[A]
80
40
0
0
2
4
6
8
0
0
50
100
150
V
GS
[V]
I
D
[A]
Rev. 2.2
page 5
2014-05-19
京公网安备 11010802033920号
EEWORLD
