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SCS210AJTLL

Description
Bluetooth / 802.15.1 Modules Bluetooth 4.0 Dual-Mode Module
CategoryDiscrete semiconductor    diode   
File Size1015KB,7 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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SCS210AJTLL Overview

Bluetooth / 802.15.1 Modules Bluetooth 4.0 Dual-Mode Module

SCS210AJTLL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionR-PSSO-G2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time10 weeks
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON CARBIDE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.55 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee2
Humidity sensitivity level1
Maximum non-repetitive peak forward current31 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation83 W
Maximum repetitive peak reverse voltage650 V
Maximum reverse current200 µA
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature10
SCS210AJ
SiC Schottky Barrier Diode
Outline
Datasheet
V
R
I
F
Q
C
Features
1) Shorter recovery time
650V
10A
15nC
LPT(L)
<TO-263AB>
(1)
(2)
(3)
(4)
Inner
circuit
(1)
2) Reduced temperature dependence
3) High-speed switching possible
(1) Cathode
(2) N / C
(3) Cathode
(4) Anode
(2)
(3)
(4)
Packaging
specifications
Packaging
Construction
Silicon carbide epitaxial planer type
Type
Basic ordering unit (pcs)
Packing code
Marking
Absolute
maximum ratings
(Tj = 25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Symbol
V
RM
V
R
I
F
Value
650
650
10*
1
Embossed tape
Reel size (mm)
Tape width (mm)
330
24
1,000
TLL
SCS210AJ
Unit
V
V
A
A
A
A
A
W
°C
°C
40*
2
Surge no repetitive forward current
I
FSM
150*
3
31*
4
Repetitive peak forward current
Total power dissipation
Junction temperature
Range of storage temperature
I
FRM
P
D
Tj
Tstg
42*
5
83*
6
175
55
to
175
*1 Tc=137°C *2 PW=8.3ms sinusoidal,Tj=25°C
*3 PW=10s square,Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C
*5 Tc=100°C,Tj=150°C,Duty cycle=10% *6 Tc=25°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
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