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CMLD2004S-TR

Description
Gate Drivers MOSFET Driver Non Inverting
Categorysemiconductor    Discrete semiconductor   
File Size521KB,5 Pages
ManufacturerCentral Semiconductor
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CMLD2004S-TR Overview

Gate Drivers MOSFET Driver Non Inverting

CMLD2004S-TR Parametric

Parameter NameAttribute value
Product CategoryDiodes - General Purpose, Power, Switching
ManufacturerCentral Semiconductor
RoHSDetails
ProductSwitching Diodes
Mounting StyleSMD/SMT
Package / CaseSOT-563-6
Peak Reverse Voltage300 V
Max Surge Current4 A
If - Forward Current225 mA
ConfigurationDual Series
Recovery Time50 ns
Vf - Forward Voltage1 V
Ir - Reverse Current100 uA
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Maximum Diode Capacitance5 pF
Pd - Power Dissipation250 mW
Factory Pack Quantity3000
Unit Weight0.000106 oz
CMLD2004G CMLD2004A
CMLD2004C CMLD2004S
CMLD2004DO
SURFACE MOUNT SILICON
DUAL, HIGH VOLTAGE
SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD2004G series
contains two (2) silicon high voltage switching diodes,
manufactured by the epitaxial planar process, epoxy
molded in an SOT-563 surface mount package,
designed for applications requiring high voltage
capability.
SOT-563 CASE
The following configurations are available:
CMLD2004G
CMLD2004A
CMLD2004C
CMLD2004S
CMLD2004DO
DUAL,
DUAL,
DUAL,
DUAL,
DUAL,
ISOLATED
COMMON ANODE
COMMON CATHODE
IN SERIES
ISOLATED OPPOSING
MARKING
MARKING
MARKING
MARKING
MARKING
CODE:
CODE:
CODE:
CODE:
CODE:
DG
04A or 4A
04C
04S
04O
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
240
300
200
225
625
4.0
1.0
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
IR
BVR
VF
CJ
trr
VR=240V
VR=240V, TA=150°C
IR=100μA
IF=100mA
VR=0, f=1.0MHz
IF=IR=30mA, Irr=3.0mA, RL=100Ω
100
100
300
1.0
5.0
50
UNITS
nA
μA
V
V
pF
ns
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