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FCA20N60 — N-Channel SuperFET
®
MOSFET
August 2014
FCA20N60
N-Channel SuperFET
®
MOSFET
600 V, 20 A, 190 mΩ
Features
• 650V @ T
J
= 150°C
• Typ. R
DS(on)
= 150 mΩ
• Ultra Low Gate Charge (Typ. Q
g
= 75 nC )
• Low Effective Output Capacitance (Typ. C
oss(eff.)
= 165 pF )
• 100% Avalanche Tested
Description
SuperFET
®
MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
Applications
• Solar Inverter
• AC-DC Power Supply
D
G
G
D
S
TO-3PN
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate-Soure voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
o
Parameter
FCA20N60 /
FCA20N60_F109
600
±30
20
12.5
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
60
690
20
20.8
4.5
208
o
C
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
- Continuous (T
C
= 25
o
C)
- Continuous (T
C
= 100 C)
- Pulsed
o
- Derate Above 25
1.67
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
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