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FDA28N50 — N-Channel UniFET
TM
MOSFET
FDA28N50
Features
May 2014
N-Channel UniFET
TM
MOSFET
500 V, 28 A, 155 mΩ
Description
UniFET
TM
MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
• R
DS(on)
= 122 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 14 A
• Low Gate Charge (Typ. 80 nC)
• Low C
rss
(Typ. 42 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• PDP TV
• Uninterruptible Power Supply
• AC-DC Power Supply
D
G
G
D
S
TO-3PN
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
o
Parameter
FDA28N50
500
±30
o
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
- Continuous (T
C
= 25 C)
- Continuous (T
C
=
- Pulsed
28
17
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
112
2391
28
31
5
310
2.5
-55 to +150
300
100
o
C)
- Derate Above 25 C
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
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Making friends through disassembly
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