April 1999
FDC6561AN
Dual N-Channel Logic Level PowerTrench
TM
MOSFET
General Description
Features
2.5 A, 30 V. R
DS(ON)
= 0.095
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.145
Ω
@ V
GS
= 4.5 V
Very fast switching.
Low gate charge (2.1nC typical).
SuperSOT
TM
-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
These N-Channel
Logic
Level MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for all applications where
small size is desireable but especially low cost DC/DC
conversion in battery powered systems.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D2
S1
D1
1
.56
G2
S2
4
3
5
2
SuperSOT
TM
-6
pin
1
G1
6
1
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise note
Ratings
Units
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
30
±20
2.5
10
0.96
0.9
0.7
-55 to 150
V
V
A
W
T
J
,T
STG
R
θJA
R
θJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
°C/W
°C/W
FDC6561AN Rev.C
© 1999 Fairchild Semiconductor Corporation
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA, Referenced to 25
o
C
V
DS
= 24 V, V
GS
= 0 V
T
J
= 55
o
C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
30
23.6
1
10
100
-100
V
mV/
o
C
µA
µA
nA
nA
∆
BV
DSS
/
∆
T
J
I
DSS
I
GSSF
I
GSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
Gate Threshold VoltageTemp.Coefficient
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
= 250 µA
I
D
= 250 µA, Referenced to 25 C
V
GS
= 10 V, I
D
= 2.5 A
T
J
= 125 C
V
GS
= 4.5 V, I
D
= 2.0 A
o
o
1
1.8
-4
0.082
0.122
0.113
3
V
mV/
o
C
∆
V
GS(th)
/
∆
T
J
R
DS(ON)
0.095
0.152
0.145
Ω
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Notes:
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Continuous Source Diode Current
Drain-Source Diode Forward Voltage
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 2.5 A
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
10
5
220
50
25
A
S
pF
pF
pF
12
18
22
6
3.2
1
1.3
0.75
ns
ns
ns
ns
nC
nC
nC
A
V
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
(Note 2)
V
DD
= 5 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
Ω
6
10
12
2
V
DS
= 15 V, I
D
= 2.5 A
V
GS
= 5 V
2.3
0.7
0.9
DRAIN-SOURCE DIODE CHARACTERISTICS
V
GS
= 0 V, I
S
= 0.75 A
(Note 2)
0.78
1.2
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed
by design while R
θ
CA
is determined by the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
a. 130
O
C/W on a 0.125 in
2
pad of
2oz copper.
b. 140
O
C/W on a 0.005 in
2
pad of
2oz copper.
c. 180
O
C/W on a minimum pad.
FDC6561AN Rev.C
Typical Electrical Characteristics
10
I
D
, DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V
GS
=10V
6.0V
4.5V
4.0V
R
DS(ON)
, NORMALIZED
2
1.8
1.6
1.4
1.2
1
0.8
8
V
GS
= 4.0V
4.5V
5.0V
6.0V
7.0V
10V
6
4
3.5V
2
3.0V
0
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4
0
2
4
6
I
D
, DRAIN CURRENT (A)
8
10
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, ON-RESISTANCE (OHM)
0.3
I
D
= 2.5 A
V
GS
= 10 V
1.4
I
D
= 1.3A
0.25
R
DS(ON)
, NORMALIZED
1.2
0.2
1
0.15
T
A
= 125°C
0.8
0.1
T
A
= 25°C
0.05
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
10
I
D
, DRAIN CURRENT (A)
8
T
A
= -55°C
125°C
25°C
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
V
GS
= 0V
1
TA = 125°C
0.1
6
25°C
-55°C
4
0.01
2
0.001
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5.Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC6561AN Rev.C
Typical Electrical Characteristics
(continued)
10
V
GS
, GATE-SOURCE VOLTAGE (V)
500
I
D
= 2.5A
8
C iss
CAPACITANCE (pF)
V
DS
= 5V
15V
200
100
6
10V
4
C oss
50
2
20
0
f = 1 MHz
V
GS
= 0V
C rss
0
1
2
Q
g
, GATE CHARGE (nC)
3
4
10
0.1
0.5
1
2
5
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics
.
30
10
I
D
, DRAIN CURRENT (A)
3
1
0.3
0.1
0.03
0.01
0.1
)
ON
S(
RD
IT
LIM
5
100
us
4
POWER (W)
1m
s
10m
s
100
ms
1s
DC
SINGLE PULSE
R
θ
JA
=180°C/W
T
A
= 25°C
3
2
V
GS
= 10V
SINGLE PULSE
R
θ
JA
=180°C/W
T
A
= 25°C
0.3
1
3
1
10
30
50
0
0.01
0.1
1
10
100
300
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2
0.1
0.05
0.2
0.1
0.05
0.02
0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
=180°C/W
P(pk)
t
1
t
2
0.02
0.01
0.0001
Single Pulse
T
J
- T
A
= P * R JA (t)
θ
Duty Cycle, D = t
1
/ t
2
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDC6561AN Rev.C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E
2
CMOS
TM
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
HiSeC™
DISCLAIMER
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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