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DB3S315E0L

Description
Schottky Diodes u0026 Rectifiers SCHOTTKY BARRIER FLT LD 1.6x1.6mm
CategoryDiscrete semiconductor    diode   
File Size482KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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DB3S315E0L Overview

Schottky Diodes u0026 Rectifiers SCHOTTKY BARRIER FLT LD 1.6x1.6mm

DB3S315E0L Parametric

Parameter NameAttribute value
package instructionR-PDSO-F3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.4 V
frequency bandL BAND
JESD-30 codeR-PDSO-F3
Number of components2
Number of terminals3
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Maximum output current0.03 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DB3S315E
Silicon epitaxial planar type
For high speed switching circuits
DB3J315E in SSMini3 type package
Features
Short reverse recovery time t
rr
Small reverse current I
R
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: 5D
Packaging
DB3S315E0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Operating ambient temperature
Storage temperature
Single
Double
*1
Single
Double
*1
Symbol
V
R
V
RM
I
F
I
FM
T
j
T
opr
T
stg
Rating
30
30
30
20
150
110
125
–40 to +85
–55 to +125
Unit
V
V
mA
mA
°C
°C
°C
1
2
1: Anode-1
2: Anode-2
Panasonic
JEITA
Code
3
3: Cathode-1
Cathode-2
SSMini3-F3-B
SC-89
SOT-490
Note) *1: Value of each diode in double diodes used.
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*1
Symbol
V
F1
V
F2
I
R
C
t
t
rr
I
F
= 1 mA
I
F
= 30 mA
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
=10 mA, I
rr
= 1 mA, R
L
= 100
1.4
1.0
Conditions
Min
Typ
Max
0.4
1.0
300
Unit
V
nA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
*1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
t
p
10%
Output Pulse
t
r
t
I
F
t
rr
t
I
rr
= 1 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ver. DED
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: April 2013
1

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