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FP50R06KE3

Description
Thermal Interface Products Soft PGS - IGBT Mod Infineon
CategoryDiscrete semiconductor    The transistor   
File Size550KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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FP50R06KE3 Overview

Thermal Interface Products Soft PGS - IGBT Mod Infineon

FP50R06KE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X24
Contacts24
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Shell connectionISOLATED
Maximum collector current (IC)60 A
Collector-emitter maximum voltage600 V
ConfigurationCOMPLEX
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X24
Number of components7
Number of terminals24
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)190 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)760 ns
Nominal on time (ton)170 ns
VCEsat-Max1.9 V
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FP50R06KE3
VorläufigeDaten/PreliminaryData
V
CES

600
50
60
100
190
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
t
d on
4,9







typ.
1,45
1,60
1,70
5,8
0,50
0,0
3,10
0,095


0,10
0,10
0,10
0,06
0,065
0,07
0,60
0,65
0,70
0,04
0,05
0,06
2,30
2,75
2,90
1,75
2,10
2,15
350
250

0,335
max.
1,90
V
V
V
V
µC
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A
A

V

A
A
EconoPIM™2ModulmitTrench/FeldstopIGBT³undEmCon3Diode
EconoPIM™2modulewiththetrench/fieldstopIGBT³andEmCon3diode
IGBT,Wechselrichter/IGBT,Inverter
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
HöchstzulässigeWerte/MaximumRatedValues
T
C
= 80°C, T
vj
= 175°C
T
C
= 25°C, T
vj
= 175°C
t
P
= 1 ms
T
C
= 25°C, T
vj
= 175°C

I
C nom

I
C
I
CRM
P
tot
V
GES




A

W

V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
I
C
= 50 A, V
GE
= 15 V
I
C
= 50 A, V
GE
= 15 V
I
C
= 50 A, V
GE
= 15 V
I
C
= 0,80 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V, V
CE
= 300V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 600 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 50 A, V
CE
= 300 V
V
GE
= ±15 V
R
Gon
= 43
I
C
= 50 A, V
CE
= 300 V
V
GE
= ±15 V
R
Gon
= 43
I
C
= 50 A, V
CE
= 300 V
V
GE
= ±15 V
R
Goff
= 43
I
C
= 50 A, V
CE
= 300 V
V
GE
= ±15 V
R
Goff
= 43
I
C
= 50 A, V
CE
= 300 V, L
S
= 25 nH
V
GE
= ±15 V, di/dt = 900 A/µs (T
vj
=150°C)
R
Gon
= 43
6,5




1,0
100

t
r


t
d off


t
f


E
on


I
C
= 50 A, V
CE
= 300 V, L
S
= 25 nH
T
vj
= 25°C
V
GE
= ±15 V, du/dt = 2500 V/µs (T
vj
=150°C) T
vj
= 125°C
R
Goff
= 43
T
vj
= 150°C
V
GE
15 V, V
CC
= 360 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT
t
P
8 µs, T
vj
= 25°C
t
P
6 µs, T
vj
= 150°C
E
off
I
SC
R
thJC
R
thCH






0,80 K/W
K/W
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
preparedby:AS
approvedby:RS
dateofpublication:2013-03-04
revision:2.0
1

FP50R06KE3 Related Products

FP50R06KE3 FP50R06KE3BOSA1
Description Thermal Interface Products Soft PGS - IGBT Mod Infineon IGBT MODULE VCES 600V 50A
Is it lead-free? Lead free Contains lead
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
Parts packaging code MODULE MODULE
package instruction FLANGE MOUNT, R-XUFM-X24 FLANGE MOUNT, R-XUFM-X24
Contacts 24 24
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Factory Lead Time 1 week 12 weeks
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 60 A 60 A
Collector-emitter maximum voltage 600 V 600 V
Configuration COMPLEX COMPLEX
JESD-30 code R-XUFM-X24 R-XUFM-X24
Number of components 7 7
Number of terminals 24 24
Maximum operating temperature 175 °C 175 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal off time (toff) 760 ns 760 ns
Nominal on time (ton) 170 ns 170 ns
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