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FZ800R12KL4C

Description
IGBT Modules 1200V 800A SINGLE
CategoryDiscrete semiconductor    The transistor   
File Size373KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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FZ800R12KL4C Overview

IGBT Modules 1200V 800A SINGLE

FZ800R12KL4C Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeMODULE
package instructionMODULE-7
Contacts7
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)1300 A
Collector-emitter maximum voltage1200 V
ConfigurationPARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)5600 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)1100 ns
Nominal on time (ton)450 ns
VCEsat-Max2.6 V
Base Number Matches1
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FZ800R12KL4C
1200VIGBTModulmitlowlossIGBTder2.tenGenerationundsofterEmitterControlledDiode
1200VIGBTModulewithlowlossIGBTof2ndgenerationandsoftEmitterControlledDiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
vj
= 125°C
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150

V
CES

1200
1200
800
1300
1600
5,70
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
t
d on
4,5







typ.
2,10
2,40
5,5
8,60
1,3
56,0
3,60


0,27
0,29
0,15
0,16
0,90
1,00
0,09
0,10
max.
2,60
2,90
6,5




5,0
400

V
V
V
µC
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ

V

A
A
I
C nom

I
C
I
CRM
P
tot
V
GES




A

kW

V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
I
C
= 800 A, V
GE
= 15 V
I
C
= 800 A, V
GE
= 15 V
I
C
= 32,0 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 800 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,8
I
C
= 800 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,8
I
C
= 800 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,8
I
C
= 800 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,8
I
C
= 800 A, V
CE
= 600 V, L
S
= 70 nH
V
GE
= ±15 V
R
Gon
= 1,8
I
C
= 800 A, V
CE
= 600 V, L
S
= 70 nH
V
GE
= ±15 V
R
Goff
= 1,8
V
GE
15 V, V
CC
= 900 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT
t
r


t
d off


t
f


E
on

120

E
off
I
SC
R
thJC
R
thCH
T
vj op




-40
125


t
P
10 µs, T
vj
= 125°C
6000

9,00

A
22,0 K/kW
K/kW
125
°C
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

preparedby:DTS
approvedby:TS
dateofpublication:2013-10-02
revision:3.1
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