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BUK9Y8R7-60E115

Description
Multilayer Ceramic Capacitors MLCC - SMD/SMT
Categorysemiconductor    Discrete semiconductor   
File Size759KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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Multilayer Ceramic Capacitors MLCC - SMD/SMT

BUK9Y8R7-60E115 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseLFPAK56-5
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current86 A
Rds On - Drain-Source Resistance6.8 mOhms
Vgs th - Gate-Source Threshold Voltage1.7 V
Vgs - Gate-Source Voltage15 V
Qg - Gate Charge31 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Channel ModeEnhancement
PackagingMouseReel
PackagingCut Tape
PackagingReel
Fall Time26 ns
Pd - Power Dissipation147 W
Rise Time30 ns
Factory Pack Quantity1500
Transistor Type1 N-Channel
Typical Turn-Off Delay Time42 ns
Typical Turn-On Delay Time17 ns
BUK9Y8R7-60E
8 May 2013
N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 5 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 11
Min
-
-
-
Typ
-
-
-
Max
60
86
147
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
6.8
8.7
Dynamic characteristics
Q
GD
V
GS
= 5 V; I
D
= 20 A; V
DS
= 48 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
9.7
-
nC
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