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FDMA86265P P-Channel PowerTrench
®
MOSFET
May 2014
FDMA86265P
P-Channel PowerTrench
®
MOSFET
-150 V, -1 A, 1.2
Ω
Features
Max r
DS(on)
= 1.2
Ω
at V
GS
= -10 V, I
D
= -1 A
Max r
DS(on)
= 1.4
Ω
at V
GS
= -6 V, I
D
= -0.9 A
Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
Very low RDS-on mid voltage P-channel silicon technology
optimised for low Qg
This product is optimised for fast switching applications as
well as load switch applications
100% UIL tested
RoHS Compliant
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench
®
process that
has been optimized for the on-state resistance and yet maintain
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