Preliminary Technical Information
TrenchMV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA220N055T
IXTP220N055T
V
DSS
I
D25
R
DS(on)
= 55
V
= 220
A
≤
4.0 m
Ω
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
LRMS
I
DM
I
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25° C to 175° C
T
J
= 25° C to 175° C; R
GS
= 1 MΩ
Transient
T
C
= 25° C
Lead Current Limit, RMS
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
175° C, R
G
= 5
Ω
T
C
= 25° C
Maximum Ratings
55
55
±
20
220
75
600
25
1.0
3
430
-55 ... +175
175
-55 ... +175
V
V
V
A
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
TO-263 (IXTA)
G
S
(TAB)
TO-220 (IXTP)
G
D
S
(TAB)
D = Drain
TAB = Drain
G = Gate
S = Source
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
300
260
1.13 / 10 Nm/lb.in.
2.5
3.0
g
g
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175
°
C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(T
J
= 25° C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±
20 V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 150° C
Characteristic Values
Min. Typ.
Max.
55
2.0
4.0
±
200
5
250
3.4
4.0
V
V
nA
µA
µA
m
Ω
V
GS
= 10 V, I
D
= 25, Notes 1, 2
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
DS99517 (11/06)
© 2006 IXYS CORPORATION All rights reserved
IXTA220N055T
IXTP220N055T
Symbol
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCH
TO-220
0.50
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A
Resistive Switching Times
V
GS
= 10 V, V
DS
= 30 V, I
D
= 25 A
R
G
= 5
Ω
(External)
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
Test Conditions
V
DS
= 10 V; I
D
= 60 A, Note 1
Characteristic Values
Min.
75
Typ.
120
7200
1270
285
36
62
53
53
158
42
46
Max.
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.35
°
C/W
°C/W
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
TO-263 (IXTA) Outline
(T
J
= 25° C unless otherwise specified)
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
Source-Drain Diode
Symbol
Test Conditions
T
J
= 25° C unless otherwise specified)
I
S
I
SM
V
SD
t
rr
V
GS
= 0 V
Pulse width limited by T
JM
I
F
= 25 A, V
GS
= 0 V, Note 1
I
F
= 25 A, -di/dt = 100 A/µs
V
R
= 25 V, V
GS
= 0 V
70
Characteristic Values
Min. Typ.
Max.
220
600
1.0
A
A
V
ns
TO-220 (IXTP) Outline
Notes: 1.
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5 mm or less from the package body.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
IXTA220N055T
IXTP220N055T
Fig. 1. Output Characteristics
@ 25ºC
220
200
180
160
V
GS
= 10V
9V
8V
320
280
240
Fig. 2. Extended Output Characteristics
@ 25ºC
V
GS
= 10V
9V
8V
I
D
- Amperes
I
D
- Amperes
140
120
100
80
60
40
20
0
0
0.1
0.2
0.3
0.4
0.5
7V
200
160
120
80
40
7V
6V
6V
5V
0
0.6
0.7
0.8
0
0.5
5V
1
1.5
2
2.5
3
3.5
4
4.5
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 150ºC
200
180
160
140
V
GS
= 10V
9V
8V
7V
2.2
2.0
Fig. 4. R
DS(on)
Normalized to I
D
= 110A Value
vs. Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
1.8
1.6
1.4
1.2
1.0
I
D
- Amperes
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
5V
6V
I
D
= 220A
I
D
= 110A
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 110A Value
vs. Drain Current
2.2
2
T
J
= 175ºC
140
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit for TO-263 (7-Lead)
120
100
R
DS(on)
- Normalized
1.8
I
D
- Amperes
1.6
1.4
1.2
1
0.8
0
40
80
120
160
200
240
280
320
V
GS
= 10V
15V
- - - -
80
60
40
20
0
-50
External Lead Current Limit for TO-3P, TO-220, & TO-263
T
J
= 25ºC
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2006 IXYS CORPORATION All rights reserved
IXTA220N055T
IXTP220N055T
Fig. 7. Input Admittance
270
240
210
180
160
T
J
= - 40ºC
140
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
180
150
120
90
60
30
0
3.5
4
4.5
5
5.5
6
6.5
T
J
= 150ºC
25ºC
-40ºC
120
100
80
60
40
20
0
0
30
60
90
120
150
25ºC
150ºC
180
210
240
270
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
300
270
240
210
10
9
8
7
V
DS
= 27.5V
I
D
= 25A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
180
150
120
90
60
30
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
T
J
= 25ºC
T
J
= 150ºC
V
GS
- Volts
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
C iss
1.00
Fig. 12. Maximum Transient Thermal
Impedance
Capacitance - PicoFarads
1,000
Z
(th)JC
- ºC / W
25
30
35
40
C oss
0.10
f = 1 MHz
100
0
5
10
15
20
C rss
0.01
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 220N055T
IXTP 220N055T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
75
70
65
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 30V
75
70
65
T
J
= 25ºC
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
t
r
- Nanoseconds
t
r
- Nanoseconds
60
55
50
45
40
35
30
25
20
25
35
45
55
65
75
85
95
I
D
= 25A
I
D
= 50A
60
55
50
45
40
35
30
25
T
J
= 125ºC
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 30V
105
115
125
25
30
35
40
45
50
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
160
140
120
100
80
60
40
20
4
6
8
10
12
14
16
18
20
I
D
= 50A, 25A
65
65
63
61
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
90
I
D
= 25A, 50A
86
82
t
r
V
DS
= 30V
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
60
55
50
45
40
35
30
t
d ( o f f )
- Nanoseconds
t
d ( o n )
- Nanoseconds
t
f
- Nanoseconds
t
r
- Nanoseconds
59
57
55
53
51
49
47
45
25
35
45
55
65
75
85
95
105
115
I
D
= 50A, 25A
78
74
70
66
62
t
f
t
d(off)
- - - -
58
54
50
125
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 30V
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
64
T
J
= 125ºC
62
60
80
76
170
84
190
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
260
t
f
V
DS
= 30V
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
230
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
t
d ( o f f )
- Nanoseconds
150
200
I
D
= 25A
170
I
D
= 50A
140
110
80
50
t
f
- Nanoseconds
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 30V
t
f
- Nanoseconds
58
56
54
52
50
48
46
24
72
68
64
60
56
T
J
= 25ºC
52
48
130
110
90
70
50
4
6
8
28
32
36
40
44
48
10
12
14
16
18
20
I
D
- Amperes
R
G
- Ohms
© 2006 IXYS CORPORATION All rights reserved
IXYS REF: T_220N055T (5V) 6-16-06.xls
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