8AF Series
Vishay Semiconductors
Pressfit Rectifier Diodes, 50 A
FEATURES
• Convenient pressfit package
• Available with and without leads
• High surge capabilities
• Fully characterized bulletin
• RoHS compliant
B-47
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
F(AV)
50 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
I
2
t
V
RRM
T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
50
T
C
150
79
714
747
2546
2324
25 455
50 to 400
- 65 to 195
UNITS
A
°C
A
A
A
2
s
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
05
8AF
1
2
4
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
50
100
200
400
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
75
150
300
500
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
7
7
5
5
Document Number: 93530
Revision: 17-Jun-08
For technical questions, contact: ind-modules@vishay.com
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1
8AF Series
Vishay Semiconductors
Pressfit Rectifier Diodes, 50 A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
=
T
J
maximum
TEST CONDITIONS
180° conduction, half sine wave
VALUES
50
150
79
714
747
600
628
2546
2324
1800
1643
25 455
0.60
0.68
6.66
6.25
1.45
A
2
s
V
A
2
s
A
UNITS
A
°C
A
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
( x I
F(AV)
< I < 20 x
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
( x I
F(AV)
< I < 20 x
x I
F(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
FM
=
x rated I
F(AV)
m
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
As per mounting details, see note
(1)
TEST CONDITIONS
VALUES
- 65 to 195
0.60
K/W
0.50
10
0.36
B-47
g
oz.
UNITS
°C
Note
(1)
Mounting: A 12.6 ± 0.02 mm (0.496 to 0.497") diameter hole should be drilled in heatsink, the leading edge chamfered to 0.038 mm
(0.015") x 45°. The autodiode should then be press fitted, ensuring that the sides of the autodiode are kept parallel to the sides of the hole.
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93530
Revision: 17-Jun-08
8AF Series
Pressfit Rectifier Diodes, 50 A
Vishay Semiconductors
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.042
0.045
0.06
0.10
0.15
RECTANGULAR CONDUCTION
0.026
0.043
0.06
0.10
0.15
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
200
8AF Series
R
thJC
(DC) = 0.6 K/W
190
180
Conduction Angle
200
190
180
8AF Series
R
thJC
(DC) = 0.6 K/W
Conduction Period
170
160
150
30°
140
0
5 10 15 20 25 30 35 40 45 50 55
Average Forward Current (A)
60°
170
160
150
30°
140
0
10
20
30
40
50
60
70
80
Average Forward Current (A)
90°
120°
180°
90°
60°
120°
180°
DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
0
25
8AF Series
T = 195°C
J
5K
/W
180°
120°
90°
60°
30°
R
SA
th
1.5
K/
W
2K
/W
=
1
K/
W
RMS Limit
3K
/W
-D
el
ta
R
Conduction Angle
10 K/W
15 K/W
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Document Number: 93530
Revision: 17-Jun-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
8AF Series
Vishay Semiconductors
Pressfit Rectifier Diodes, 50 A
Maximum Average Forward Power Loss (W)
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
80
0
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
8AF Series
T = 195°C
J
5K
/W
Conduction Period
10 K/W
15 K/W
DC
180°
120°
90°
60°
30°
R
1.5
K/
W
2K
/W
SA
th
=
1K
/W
-D
elt
a
R
RMS Limit
3K
/W
Fig. 4 - Forward Power Loss Characteristics
700
Peak Half Sine Wave Forward Current (A)
650
600
550
500
450
400
350
300
250
200
150
1
1000
Instantaneous Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 195°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
8AF Series
100
10
T
J
= 25°C
T = 195°C
J
1
0
1
2
3
4
5
6
7
8AF Series
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
750
Peak Half Sine Wave Forward Current (A)
700
650
600
550
500
450
400
350
300
250
200
150
0.01
Transient Thermal Impedance Z
thJC
(K/W)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T = 195 °C
J
No Voltage Reapplied
Rated V
RRM
Reapplied
1
Steady State Value
(DC Operation)
0.1
8AF Series
8AF Series
0.01
0.001
0.1
Pulse Train Duration (s)
1
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93530
Revision: 17-Jun-08
8AF Series
Pressfit Rectifier Diodes, 50 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
8AF
1
1
2
3
4
2
-
-
-
N
3
LV
4
Essential part number
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
N = Normal polarity (cathode to case)
R = Reverse polarity (anode to case)
4
-
PP = Without lead
LH = Horizontal lead
LV = Vertical lead
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95330
Document Number: 93530
Revision: 17-Jun-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
Embedded System
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