BSV 236SP
OptiMOS
-P Small-Signal-Transistor
Feature
•
P-Channel
•
Enhancement mode
•
Super Logic Level (2.5 V rated)
•
150°C operating temperature
•
Avalanche rated
•
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
-20
175
-1.5
PG-SOT-363
4
V
mΩ
A
5
6
2
3
•
Qualified according to AEC Q101
•
Halogen-free according to IEC61249-2-21
Type
BSV 236SP
Package
PG-SOT-363
Tape and Reel inf
Marking
Gate
pin 3
1
VPS05604
Drain
pin 1,2,
5,6
Source
pin 4
H
6327:3000pcs/r.
X2s
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
-1.5
-1.2
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
E
AS
-6
9.5
Avalanche energy, single pulse
I
D
=-1.5 A ,
V
DD
=-10V,
R
GS
=25Ω
mJ
kV/µs
V
W
Reverse diode dv/dt
I
S
=-1.5A,
V
DS
=-16V, di/dt=200A/µs,
T
jmax
=150°C
dv/dt
V
GS
P
tot
-6
±12
0.56
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ESD Class
JESD22-A114-HBM
T
j ,
T
stg
-55... +150
55/150/56
°C
Class 0
Rev 1.5
Page 1
2011-07-14
BSV 236SP
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
R
thJS
R
thJA
-
-
-
Values
typ.
-
-
-
max.
90
220
110
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=-250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
-20
-0.6
Values
typ.
-
-0.9
max.
-
-1.2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-8µA
Zero gate voltage drain current
V
DS
=-20V,
V
GS
=0,
T
j
=25°C
V
DS
=-20V,
V
GS
=0,
T
j
=150°C
µA
-0.1
-10
-10
193
131
-1
-100
-100
285
175
nA
mΩ
Gate-source leakage current
V
GS
=-12V,
V
DS
=0
Drain-source on-state resistance
V
GS
=-2.5V,
I
D
=-0.8A
Drain-source on-state resistance
V
GS
=-4.5,
I
D
=-1.5A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t
≤10
sec.
Rev 1.5
Page 2
2011-07-14
BSV 236SP
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-10V,
V
GS
=-4.5V,
I
D
=-1A,
R
G
=6Ω
çV
DS
ç≥2*çI
D
ç*R
DS(on)max
I
D
=-1.2A
V
GS
=0,
V
DS
=-15V,
f=1MHz
Symbol
Conditions
min.
2.2
-
-
-
-
-
-
-
Values
typ.
4.4
228
92
75
5.7
8.5
14.1
12.2
max.
-
-
-
-
8.5
12.7
21.1
18.3
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0, |I
F
| = |I
D
|
V
R
=-10V, |I
F
|
=
|l
D
|,
di
F
/dt=100A/µs
Q
gs
Q
gd
Q
g
V
DD
=-10V,
I
D
=-1.5A
-
-
-
-
-0.4
-1.8
-3.8
-1.6
-0.6
-2.7
-5.7
-
nC
V
DD
=-10V,
I
D
=-1.5A,
V
GS
=0 to -4.5V
V
(plateau)
V
DD
=-10V,
I
D
=-1.5A
V
I
S
I
SM
T
A
=25°C
-
-
-
-
-
-
-
0.88
16.4
3.4
-0.11 A
-6
1.3
20.5
4.3
V
ns
nC
Rev 1.5
Page 3
2011-07-14
BSV 236SP
1 Power dissipation
P
tot
=
f
(T
A
)
1.3
BSV 236SP
2 Drain current
I
D
=
f
(T
A
)
parameter: |V
GS
|≥ 4.5 V
-1.6
BSV 236SP
W
A
1.1
1
0.9
-1.2
P
tot
I
D
20
40
60
80
100
120
0.8
0.7
-1
-0.8
0.6
0.5
0.4
0.3
0.2
0.1
0
0
-0.4
-0.6
-0.2
°C
160
0
0
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
-10
1
BSV 236SP
D
4 Transient thermal impedance
Z
thJS
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
2
t
p = 45.0µs
100 µs
BSV 236SP
/
I
A
R
DS
(
on
)
=
V
DS
K/W
10
1
1 ms
-10
0
Z
thJS
10 ms
I
D
10
0
D = 0.50
10
-10
-1
single pulse
-1
0.20
0.10
0.05
10
-2
DC
0.02
0.01
-10
-2 -1
-10
-10
0
-10
1
V
-10
2
10
-3 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Rev 1.5
Page 4
t
p
2011-07-14
BSV 236SP
5 Typ. output characteristic
I
D
=
f
(V
DS
);
T
j
=25°C
parameter:
t
p
= 80 µs
12
Vgs = -3.4V
A
Vgs = -3V
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
0.5
Vgs = -2V
Ω
R
DS(on)
-
I
D
8
Vgs = -3.8V
Vgs = -4.5V
Vgs = -6V
6
Vgs = - 2.4V
Vgs= - 2.6V
Vgs = - 3V
Vgs= - 3.4V
Vgs = - 3.8V
Vgs = - 4.5V
Vgs= - 5V
Vgs = - 6V
0.3
Vgs = -2.6V
0.2
4
Vgs = -2.4V
Vgs = -2V
0.1
2
Vgs = -1.8V
0
0
1
2
3
4
5
6
7
8
V
10
0
0
2
4
6
8
-
V
DS
11
A
-
I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
); |V
DS
|≥ 2 x |I
D
| x
R
DS(on)max
parameter:
t
p
= 80 µs
5
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
t
p = 80 µs
8
A
4
S
6
3.5
-
I
D
g
fs
0.25 0.5 0.75
1
1.25 1.5 1.75
2
3
2.5
2
1.5
5
4
3
2
1
0.5
0
0
1
V
2.5
-
V
GS
0
0
0.5
1
1.5
2
2.5
3
3.5
4
A
5
-
I
D
Rev 1.5
Page 5
2011-07-14
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